2SC4081UBTLR
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- Mfr.Part #
- 2SC4081UBTLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A UMT3F
- Stock
- 84
- In Stock ：
- 84
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Saturation Voltage :
- 400mV
- Lead Free :
- Lead Free
- Width :
- 1.25mm
- Gain Bandwidth Product :
- 180MHz
- Length :
- 2mm
- Emitter Base Voltage (VEBO) :
- 7V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- 2SC4081
- Package / Case :
- SC-85
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Transition Frequency :
- 180MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Max Frequency :
- 100MHz
- Continuous Collector Current :
- 150mA
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- hFE Min :
- 120
- Max Breakdown Voltage :
- 50V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Number of Pins :
- 85
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PDSO-F3
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Height :
- 900μm
- Published :
- 2010
- Max Collector Current :
- 150mA
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 10 Weeks
- Terminal Position :
- Dual
- Transistor Application :
- AMPLIFIER
- Datasheets
- 2SC4081UBTLR
2SC4081UBTLR Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-85 Tape & Reel (TR) Surface Mount
2SC4081UBTLR Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 150mA.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
2SC4081UBTLR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
2SC4081UBTLR Applications
There are a lot of ROHM Semiconductor
2SC4081UBTLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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