2SA2210-1E

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Mfr.Part #
2SA2210-1E
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS PNP 50V 20A TO220F-3SG
Stock
67,923
In Stock :
67,923

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
-6V
Current - Collector (Ic) (Max) :
20A
Collector Base Voltage (VCBO) :
-50V
Collector Emitter Breakdown Voltage :
50V
Factory Lead Time :
2 Weeks
Pbfree Code :
yes
Max Collector Current :
20A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2013
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Packaging :
Tube
Number of Terminations :
3
Case Connection :
Isolated
Transistor Type :
PNP
Number of Elements :
1
Transition Frequency :
140MHz
JESD-30 Code :
R-PSFM-T3
RoHS Status :
ROHS3 Compliant
Gain Bandwidth Product :
140MHz
Mount :
Through Hole
Polarity/Channel Type :
PNP
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 1A 2V
Mounting Type :
Through Hole
hFE Min :
150
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
500mV @ 350mA, 7A
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
10μA ICBO
Lead Free :
Lead Free
Max Power Dissipation :
2W
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
500mV
Package / Case :
TO-220-3 Full Pack
Terminal Finish :
Tin (Sn)
Collector Emitter Saturation Voltage :
-200mV
Reach Compliance Code :
not_compliant
Element Configuration :
Single
Datasheets
2SA2210-1E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA2210-1E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, 2SA2210-1E pinout, 2SA2210-1E datasheet PDF, 2SA2210-1E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA2210-1E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA2210-1E


PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole

2SA2210-1E Overview


In this device, the DC current gain is 150 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 350mA, 7A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 140MHz.Single BJT transistor is possible for the collector current to fall as low as 20A volts at Single BJT transistors maximum.

2SA2210-1E Features


the DC current gain for this device is 150 @ 1A 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 350mA, 7A
the emitter base voltage is kept at -6V
a transition frequency of 140MHz


2SA2210-1E Applications


There are a lot of ON Semiconductor
2SA2210-1E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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