2SA2202-TD-E
- Mfr.Part #
- 2SA2202-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A PCP
- Stock
- 1,175
- In Stock :
- 1,175
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e6
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Height :
- 1.5mm
- Pin Count :
- 3
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 1.3W
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-243AA
- Length :
- 4.5mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 300MHz
- Collector Base Voltage (VCBO) :
- -100V
- Number of Pins :
- 3
- Max Frequency :
- 1MHz
- Max Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Factory Lead Time :
- 9 Weeks
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Saturation Voltage :
- -120mV
- Pbfree Code :
- yes
- Power - Max :
- 3.5W
- Published :
- 2006
- Gain Bandwidth Product :
- 300MHz
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Width :
- 2.5mm
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 5V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Emitter Base Voltage (VEBO) :
- -7V
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 100mA, 1A
- ECCN Code :
- EAR99
- Datasheets
- 2SA2202-TD-E

PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA2202-TD-E Overview
In this device, the DC current gain is 200 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -120mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 240mV @ 100mA, 1A.Keeping the emitter base voltage at -7V allows for a high level of efficiency.300MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.
2SA2202-TD-E Features
the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 240mV @ 100mA, 1A
the emitter base voltage is kept at -7V
a transition frequency of 300MHz
2SA2202-TD-E Applications
There are a lot of ON Semiconductor
2SA2202-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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