2SA2127-AE
- Mfr.Part #
- 2SA2127-AE
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A 3MP
- Stock
- 3,342
- In Stock :
- 3,342
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Max Frequency :
- 420MHz
- Published :
- 2012
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- -6V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Box (TB)
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 420MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Pbfree Code :
- yes
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Max Breakdown Voltage :
- 50V
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- -50V
- Collector Emitter Saturation Voltage :
- -200mV
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Max Collector Current :
- 2A
- Length :
- 6mm
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 420MHz
- Width :
- 4.7mm
- Height :
- 8.5mm
- Collector Emitter Breakdown Voltage :
- 50V
- JEDEC-95 Code :
- TO-226AE
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Power Dissipation :
- 1W
- Surface Mount :
- No
- Datasheets
- 2SA2127-AE
,TO-226_straightlead.jpg)
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2SA2127-AE Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V can result in a high level of efficiency.There is a transition frequency of 420MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 2A volts.
2SA2127-AE Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 420MHz
2SA2127-AE Applications
There are a lot of ON Semiconductor
2SA2127-AE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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