2SA2039-TL-E
- Mfr.Part #
- 2SA2039-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 50V 5A TP-FA
- Stock
- 9,552
- In Stock :
- 9,552
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.5mm
- JESD-609 Code :
- e6
- Factory Lead Time :
- 4 Weeks
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 100mA, 2A
- Collector Emitter Voltage (VCEO) :
- 50V
- Transition Frequency :
- 360MHz
- Lead Free :
- Lead Free
- hFE Min :
- 200
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Number of Terminations :
- 2
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Gain Bandwidth Product :
- 400MHz
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 100V
- Max Collector Current :
- 5A
- Height :
- 2.3mm
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- HTS Code :
- 8541.21.00.75
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- 160mV
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Base Part Number :
- 2SA2039
- Max Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Width :
- 5.5mm
- Number of Elements :
- 1
- Frequency - Transition :
- 360MHz
- Max Power Dissipation :
- 800mW
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2012
- Max Frequency :
- 360MHz
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SA2039-TL-E

PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SA2039-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 160mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 360MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 5A volts.
2SA2039-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 430mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
2SA2039-TL-E Applications
There are a lot of ON Semiconductor
2SA2039-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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