2SA2039-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

360MHz

Max Power Dissipation :

800mW

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

430mV @ 100mA, 2A

Configuration :

Single

Collector Emitter Voltage (VCEO) :

50V

Current - Collector (Ic) (Max) :

5A

Max Collector Current :

5A

Pin Count :

3

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

1μA ICBO

hFE Min :

200

Surface Mount :

No

Emitter Base Voltage (VEBO) :

6V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Collector Base Voltage (VCBO) :

50V

Mounting Type :

Through Hole

Terminal Position :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 500mA 2V

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Power Dissipation :

800mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

2SA2039

Frequency :

360MHz

Pbfree Code :

yes

JESD-609 Code :

e6

Number of Elements :

1

Published :

2012

Packaging :

Bulk

Factory Lead Time :

4 Weeks