2SA2029M3T5G
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- Mfr.Part #
- 2SA2029M3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.1A SOT723
- Stock
- 15,082
- In Stock ：
- 15,082
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Length :
- 1.25mm
- Contact Plating :
- Tin
- Height :
- 550μm
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Current Rating :
- -100mA
- Pin Count :
- 3
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 265mW
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 50V
- Halogen Free :
- Halogen Free
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Application :
- AMPLIFIER
- Surface Mount :
- yes
- Transition Frequency :
- 140MHz
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 500pA ICBO
- Terminal Form :
- Flat
- hFE Min :
- 120
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SOT-723
- Published :
- 2009
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- -500mV
- Width :
- 850μm
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 140MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 140MHz
- Terminal Position :
- Dual
- Max Power Dissipation :
- 265mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- Datasheets
- 2SA2029M3T5G
PNP 150°C TJ 500pA ICBO 1 Elements 3 Terminations SILICON PNP SOT-723 Tape & Reel (TR) Surface Mount
2SA2029M3T5G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 140MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
2SA2029M3T5G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is -100mA
a transition frequency of 140MHz
2SA2029M3T5G Applications
There are a lot of ON Semiconductor
2SA2029M3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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