2SA1774EBTLR
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- Mfr.Part #
- 2SA1774EBTLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A EMT3F
- Stock
- 23,867
- In Stock ：
- 23,867
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Reach Compliance Code :
- not_compliant
- Published :
- 2013
- Collector Emitter Saturation Voltage :
- -500mV
- Max Power Dissipation :
- 150mW
- Number of Pins :
- 89
- Emitter Base Voltage (VEBO) :
- -6V
- Height :
- 800μm
- Max Collector Current :
- 150mA
- Max Frequency :
- 100MHz
- Factory Lead Time :
- 12 Weeks
- Width :
- 960μm
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Cut Tape (CT)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Length :
- 1.7mm
- Gain Bandwidth Product :
- 140MHz
- Package / Case :
- SC-89, SOT-490
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- hFE Min :
- 120
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Continuous Collector Current :
- -150mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Datasheets
- 2SA1774EBTLR
PNP 150°C TJ 100nA ICBO PNP SC-89, SOT-490 Cut Tape (CT) Surface Mount
2SA1774EBTLR Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -150mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
2SA1774EBTLR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
2SA1774EBTLR Applications
There are a lot of ROHM Semiconductor
2SA1774EBTLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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