2SA1013-O,T6MIBF(J
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- Mfr.Part #
- 2SA1013-O,T6MIBF(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 160V 1A TO92L
- Stock
- 16,422
- In Stock ：
- 16,422
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 900mW
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 1A
- Frequency - Transition :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 200mA 5V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Datasheets
- 2SA1013-O,T6MIBF(J
PNP 150°C TJ 1μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SA1013-O,T6MIBF(J Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 200mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 50mA, 500mA.Device displays Collector Emitter Breakdown (160V maximal voltage).
2SA1013-O,T6MIBF(J Features
the DC current gain for this device is 60 @ 200mA 5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
2SA1013-O,T6MIBF(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1013-O,T6MIBF(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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