2N7002W

Manufacturer :

YANGJIE

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Factory Lead Time :

13 Weeks

JESD-609 Code :

e3

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

280mW

Pbfree Code :

yes

Number of Pins :

3

Contact Plating :

Tin

Turn On Delay Time :

12.2 ns

Number of Channels :

1

Width :

1.25mm

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

150°C

REACH SVHC :

No SVHC

Number of Terminations :

3

Threshold Voltage :

1V

Published :

2008

Height :

1.1mm

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

115mA Ta

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Length :

2mm

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Package / Case :

SC-70, SOT-323

Mount :

Surface Mount

Resistance :

7.5Ohm

Turn-Off Delay Time :

55.8 ns

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Continuous Drain Current (ID) :

310mA

Weight :

30mg

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

200mW Ta

Feedback Cap-Max (Crss) :

7 pF

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 50mA, 5V

Number of Elements :

1