2N7002
- Mfr.Part #
- 2N7002
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- N-CH MOSFET 60V 0.34A SOT-23-3L
- Stock
- 13,115
- In Stock :
- 13,115
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 500mA, 10V
- Nominal Vgs :
- 2.1 V
- RoHS Status :
- ROHS3 Compliant
- Dual Supply Voltage :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage :
- 60V
- Height :
- 930μm
- Max Operating Temperature :
- 150°C
- Base Part Number :
- 2N7002
- Threshold Voltage :
- 2.1V
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 115mA
- Resistance :
- 5.3Ohm
- Drain to Source Voltage (Vdss) :
- 60V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Voltage - Rated DC :
- 60V
- Input Capacitance :
- 50pF
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Min Operating Temperature :
- -55°C
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 200mW
- Vgs (Max) :
- ±20V
- Length :
- 2.92mm
- Power Dissipation-Max :
- 200mW Ta
- Rds On Max :
- 7.5 Ω
- Current :
- 115mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 115mA
- Width :
- 3.05mm
- Published :
- 2016
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Packaging :
- Tape and Reel (TR)
- Drain to Source Resistance :
- 1.2Ohm
- Datasheets
- 2N7002

N-Channel Tape & Reel (TR) 7.5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002 Description
2N7002 is a N-channel enhanced FET, which is produced by high cell density and DMOS process. The product minimizes on-resistance and provides durable, reliable and fast switching performance. It can be used in most applications that require up to 400 mA DC and can provide pulse currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control or power MOSFET gate drivers.
2N7002 Features
High density battery design for very low RDS (ON)
High saturation current capacity
Voltage controlled small signal switch
Solid and reliable
2N7002 Application
Power management
motor drive and control
audio
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