2N7002
- Mfr.Part #
- 2N7002
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 N 60V 0.34A Transistors
- Stock
- 13,115
- In Stock :
- 13,115
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Base Part Number :
- 2N7002
- Dual Supply Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 115mA
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Published :
- 2016
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 60V
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Height :
- 930μm
- Factory Lead Time :
- 8 Weeks
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Threshold Voltage :
- 2.1V
- Input Capacitance :
- 50pF
- Nominal Vgs :
- 2.1 V
- Drain to Source Resistance :
- 1.2Ohm
- Supplier Device Package :
- SOT-23 (TO-236AB)
- Rds On (Max) @ Id, Vgs :
- 7.5Ohm @ 500mA, 10V
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Resistance :
- 5.3Ohm
- Length :
- 2.92mm
- Rds On Max :
- 7.5 Ω
- Voltage - Rated DC :
- 60V
- Current :
- 115mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 115mA Ta
- Min Operating Temperature :
- -55°C
- Voltage :
- 60V
- Current Rating :
- 115mA
- Width :
- 3.05mm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 200mW Ta
- Datasheets
- 2N7002
N-Channel Tape & Reel (TR) 7.5Ohm @ 500mA, 10V ±20V 50pF @ 25V 60V TO-236-3, SC-59, SOT-23-3
2N7002 Description
2N7002 is a N-channel enhanced FET, which is produced by high cell density and DMOS process. The product minimizes on-resistance and provides durable, reliable and fast switching performance. It can be used in most applications that require up to 400 mA DC and can provide pulse currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control or power MOSFET gate drivers.
2N7002 Features
High density battery design for very low RDS (ON)
High saturation current capacity
Voltage controlled small signal switch
Solid and reliable
2N7002 Application
Power management
motor drive and control
audio
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