2N5109

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector-Base Capacitance-Max :

3.5pF

Polarity :

NPN

Element Configuration :

Single

Highest Frequency Band :

VERY HIGH FREQUENCY B

Terminal Position :

BOTTOM

Transition Frequency :

1200MHz

Max Operating Temperature :

150°C

Power Dissipation-Max :

1W

Factory Lead Time :

8 Weeks

JESD-30 Code :

O-MBCY-W3

Package / Case :

TO-39

JESD-609 Code :

e0

Published :

2011

Collector Emitter Voltage (VCEO) :

20V

Mount :

Through Hole

HTS Code :

8541.29.00.75

Qualification Status :

Not Qualified

Collector Emitter Saturation Voltage :

500mV

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

hFE Min :

70

Collector Emitter Breakdown Voltage :

20V

Max Collector Current :

400mA

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

1

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

3V

Gain :

11 dB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Pbfree Code :

No

Frequency - Transition :

1.2GHz

Min Operating Temperature :

-65°C

Collector Base Voltage (VCBO) :

40V

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Gain Bandwidth Product :

1.2 GHz

Lead Free :

Lead Free

Continuous Collector Current :

400mA

Power - Output :

1W

Terminal Form :

Wire