2N5109

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity :

NPN

Pbfree Code :

No

Collector-Base Capacitance-Max :

3.5pF

Highest Frequency Band :

VERY HIGH FREQUENCY B

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

20V

Collector Emitter Voltage (VCEO) :

20V

Collector Emitter Saturation Voltage :

500mV

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Package / Case :

TO-39

Power Dissipation-Max :

1W

Element Configuration :

Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Gain Bandwidth Product :

1.2 GHz

Terminal Form :

Wire

JESD-609 Code :

e0

Mount :

Through Hole

Gain :

11 dB

Pin Count :

3

Max Operating Temperature :

150°C

Continuous Collector Current :

400mA

ECCN Code :

EAR99

Transition Frequency :

1200MHz

Transistor Application :

AMPLIFIER

Number of Terminations :

3

HTS Code :

8541.29.00.75

hFE Min :

70

RoHS Status :

RoHS Compliant

Factory Lead Time :

8 Weeks

Max Collector Current :

400mA

Collector Base Voltage (VCBO) :

40V

Min Operating Temperature :

-65°C

Frequency - Transition :

1.2GHz

Qualification Status :

Not Qualified

JESD-30 Code :

O-MBCY-W3

Power - Output :

1W

Published :

2011

Emitter Base Voltage (VEBO) :

3V