2N5109

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Collector Current :

400mA

Element Configuration :

Single

Pbfree Code :

No

Mount :

Through Hole

Number of Elements :

1

Power - Output :

1W

Gain :

11 dB

JESD-609 Code :

e0

JESD-30 Code :

O-MBCY-W3

Gain Bandwidth Product :

1.2 GHz

HTS Code :

8541.29.00.75

Collector Emitter Voltage (VCEO) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Operating Temperature :

150°C

Frequency - Transition :

1.2GHz

Min Operating Temperature :

-65°C

Polarity :

NPN

Emitter Base Voltage (VEBO) :

3V

Continuous Collector Current :

400mA

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

Highest Frequency Band :

VERY HIGH FREQUENCY B

Number of Terminations :

3

Terminal Position :

BOTTOM

Pin Count :

3

Collector-Base Capacitance-Max :

3.5pF

Lead Free :

Lead Free

Transistor Application :

AMPLIFIER

Terminal Form :

Wire

Qualification Status :

Not Qualified

Published :

2011

RoHS Status :

RoHS Compliant

Collector Base Voltage (VCBO) :

40V

Collector Emitter Saturation Voltage :

500mV

Power Dissipation-Max :

1W

Terminal Finish :

Tin/Lead (Sn/Pb)

Package / Case :

TO-39

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

hFE Min :

70

Collector Emitter Breakdown Voltage :

20V

Transition Frequency :

1200MHz