2N5109

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-609 Code :

e0

Highest Frequency Band :

VERY HIGH FREQUENCY B

Gain :

11 dB

Terminal Finish :

Tin/Lead (Sn/Pb)

Pin Count :

3

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Base Voltage (VCBO) :

40V

Transition Frequency :

1200MHz

hFE Min :

70

JESD-30 Code :

O-MBCY-W3

ECCN Code :

EAR99

Collector-Base Capacitance-Max :

3.5pF

Transistor Application :

AMPLIFIER

HTS Code :

8541.29.00.75

Package / Case :

TO-39

Factory Lead Time :

8 Weeks

Collector Emitter Voltage (VCEO) :

20V

Min Operating Temperature :

-65°C

Emitter Base Voltage (VEBO) :

3V

Continuous Collector Current :

400mA

Number of Terminations :

3

Number of Elements :

1

Power - Output :

1W

Collector Emitter Saturation Voltage :

500mV

Terminal Form :

Wire

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Collector Current :

400mA

Power Dissipation-Max :

1W

Lead Free :

Lead Free

Polarity :

NPN

Mount :

Through Hole

Frequency - Transition :

1.2GHz

Terminal Position :

BOTTOM

Max Operating Temperature :

150°C

Gain Bandwidth Product :

1.2 GHz

Pbfree Code :

No

Published :

2011

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

20V

RoHS Status :

RoHS Compliant