2N5088RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

30V

Voltage - Rated DC :

30V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Terminal Position :

BOTTOM

Current Rating :

50mA

Base Part Number :

2N5088

ECCN Code :

EAR99

Number of Elements :

1

Emitter Base Voltage (VEBO) :

3V

Collector Base Voltage (VCBO) :

35V

Power Dissipation :

625mW

Collector Emitter Voltage (VCEO) :

30V

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Collector Cutoff (Max) :

50nA ICBO

Element Configuration :

Single

Transistor Element Material :

SILICON

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Through Hole

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

240

JESD-609 Code :

e0

Published :

2006

Collector Emitter Saturation Voltage :

500mV

Frequency :

50MHz

hFE Min :

300

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Max Collector Current :

50mA

Mounting Type :

Through Hole

Packaging :

Tape and Reel (TR)

RoHS Status :

Non-RoHS Compliant

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100μA 5V

Lead Free :

Contains Lead

Max Power Dissipation :

625mW

Pin Count :

3

Transition Frequency :

50MHz

Reach Compliance Code :

not_compliant

Additional Feature :

LOW NOISE

Gain Bandwidth Product :

50MHz

Transistor Type :

NPN

Qualification Status :

Not Qualified

Transistor Application :

AMPLIFIER