2N5007

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

10 A

Product Type :

BJTs - Bipolar Transistors

Series :

-

Product Status :

Active

Configuration :

Single

Transistor Element Material :

SILICON

Operating Temperature :

-65°C ~ 200°C (TJ)

Power - Max :

100 W

VCEsat-Max :

0.9 V

Brand :

Microchip Technology

Power Dissipation Ambient-Max :

116 W

Package :

Bulk

Package / Case :

TO-211MA, TO-210AC, TO-61-4, Stud

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Frequency - Transition :

-

DC Current Gain-Min (hFE) :

30

Power Dissipation-Max (Abs) :

100 W

Polarity/Channel Type :

PNP

Supplier Device Package :

TO-61

Surface Mount :

No

Reach Compliance Code :

Unknown

Product Category :

Bipolar Transistors - BJT

Pbfree Code :

No

Subcategory :

Transistors

JESD-30 Code :

O-MUPM-D3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Pin Count :

3

Collector-Emitter Voltage-Max :

80 V

Current - Collector Cutoff (Max) :

-

Qualification Status :

Not Qualified

Transistor Type :

PNP

Package Shape :

Round

Mounting Type :

Stud Mount

Terminal Position :

UPPER

Terminal Form :

Solder Lug

Case Connection :

Isolated

Number of Elements :

1

Collector Current-Max (IC) :

10 A

Number of Terminals :

3

Voltage - Collector Emitter Breakdown (Max) :

80 V

Manufacturer :

Microchip

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1mA, 5mA

ECCN Code :

EAR99