2N5008
- Mfr.Part #
- 2N5008
- Manufacturer
- Microchip Technology
- Package / Case
- TO-211MA, TO-210AC, TO-61-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 22,189
- In Stock :
- 22,189
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain-Min (hFE) :
- 70
- Collector-Emitter Voltage-Max :
- 80 V
- Package / Case :
- TO-211MA, TO-210AC, TO-61-4, Stud
- Current - Collector Cutoff (Max) :
- -
- Product Category :
- Bipolar Transistors - BJT
- Supplier Device Package :
- TO-61
- Current - Collector (Ic) (Max) :
- 10 A
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Subcategory :
- Transistors
- JESD-30 Code :
- O-MUPM-D3
- Frequency - Transition :
- -
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package :
- Bulk
- Transistor Type :
- PNP
- Manufacturer :
- Microchip
- Case Connection :
- Isolated
- Qualification Status :
- Not Qualified
- Package Shape :
- Round
- Number of Terminals :
- 3
- Mounting Type :
- Stud Mount
- Pin Count :
- 3
- Product Type :
- BJTs - Bipolar Transistors
- Product Status :
- Active
- Collector Current-Max (IC) :
- 10 A
- Series :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Reach Compliance Code :
- Unknown
- Power Dissipation-Max (Abs) :
- 100 W
- Surface Mount :
- No
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 500μA, 5mA
- Brand :
- Microchip Technology
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- ECCN Code :
- EAR99
- VCEsat-Max :
- 0.9 V
- Pbfree Code :
- No
- Power - Max :
- 100 W
- Terminal Form :
- Solder Lug
- Power Dissipation Ambient-Max :
- 116 W
- Transistor Element Material :
- SILICON
- Terminal Position :
- UPPER
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Datasheets
- 2N5008
PNP -65°C ~ 200°C (TJ) - 1 Elements SILICON NPN TO-211MA, TO-210AC, TO-61-4, Stud Stud Mount
2N5008 Overview
This device has a DC current gain of -, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 900mV @ 500μA, 5mA means Ic has reached its maximum value(saturated).Product package TO-61 comes from the supplier.80 V is the maximization voltage for the collector-emitter.Collector Emitter Breakdown occurs at 80 VV - Maximum voltage.
2N5008 Features
the DC current gain for this device is -
the vce saturation(Max) is 900mV @ 500μA, 5mA
the supplier device package of TO-61
2N5008 Applications
There are a lot of Microchip Technology
2N5008 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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