2N5012

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

700V

Max Power Dissipation :

1W

Published :

2007

Terminal Position :

BOTTOM

Radiation Hardening :

No

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Mount :

Through Hole

Pbfree Code :

No

Packaging :

Bulk

Current - Collector Cutoff (Max) :

10nA ICBO

Configuration :

Single

JESD-609 Code :

e0

Terminal Finish :

TIN LEAD

Max Collector Current :

200mA

Operating Temperature :

-65°C~200°C TJ

Number of Pins :

3

Current - Collector (Ic) (Max) :

200mA

Terminal Form :

Wire

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

Not Applicable

Mounting Type :

Through Hole

Lifecycle Status :

Obsolete (Last Updated: 1 month ago)

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Package / Case :

TO-205AA, TO-5-3 Metal Can

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 25mA 10V

Transistor Type :

NPN