2N5011S
- Mfr.Part #
- 2N5011S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 25,089
- In Stock :
- 25,089
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Active
- Power - Max :
- 1 W
- Brand :
- Microchip Technology
- Frequency - Transition :
- -
- Manufacturer :
- Microchip
- Current - Collector (Ic) (Max) :
- 200 mA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Subcategory :
- Transistors
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Type :
- BJTs - Bipolar Transistors
- Current - Collector Cutoff (Max) :
- 10nA (ICBO)
- Supplier Device Package :
- TO-39 (TO-205AD)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA, 10V
- Transistor Type :
- NPN
- Package :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 5mA, 25mA
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
- Product Category :
- Bipolar Transistors - BJT
- Series :
- -
- Datasheets
- 2N5011S
NPN -65°C ~ 200°C (TJ) 10nA (ICBO) TO-205AD, TO-39-3 Metal Can Through Hole
2N5011S Overview
In this device, the DC current gain is 30 @ 25mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 5mA, 25mA.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 600 V maximal voltage in the device due to collector-emitter breakdown.
2N5011S Features
the DC current gain for this device is 30 @ 25mA, 10V
the vce saturation(Max) is 1.5V @ 5mA, 25mA
the supplier device package of TO-39 (TO-205AD)
2N5011S Applications
There are a lot of Microchip Technology
2N5011S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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