2N4427

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

2V

Transistor Type :

NPN

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Form :

Wire

Continuous Collector Current :

400mA

JESD-30 Code :

O-MBCY-W3

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Max Collector Current :

400mA

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Packaging :

Bulk

Number of Elements :

1

Operating Temperature :

-65°C~200°C TJ

Terminal Position :

BOTTOM

Gain Bandwidth Product :

500MHz

Output Power :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Highest Frequency Band :

VERY HIGH FREQUENCY B

Package / Case :

TO-205AD, TO-39-3 Metal Can

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

20V

Gain :

10dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 100mA 5V

Transition Frequency :

500MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

hFE Min :

10

Transistor Application :

AMPLIFIER

Published :

2001

Reach Compliance Code :

not_compliant

Pbfree Code :

No

Mount :

Through Hole

HTS Code :

8541.29.00.75

ECCN Code :

EAR99

Number of Terminations :

3

Collector Emitter Saturation Voltage :

500mV

Collector Base Voltage (VCBO) :

40V

Max Power Dissipation :

1W

Collector-Base Capacitance-Max :

4pF

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED