2N3776
- Mfr.Part #
- 2N3776
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 40,161
- In Stock :
- 40,161
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- -
- Supplier Device Package :
- TO-5AA
- Manufacturer :
- Microchip
- Frequency - Transition :
- -
- Brand :
- Microchip Technology
- Product Type :
- BJTs - Bipolar Transistors
- Mounting Type :
- Through Hole
- Collector-Emitter Voltage-Max :
- 80 V
- Technology :
- Si
- Reach Compliance Code :
- Compliant
- VCEsat-Max :
- 0.2 V
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Terminal Position :
- BOTTOM
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- DC Current Gain-Min (hFE) :
- 20
- Configuration :
- Single
- Product Status :
- Active
- Operating Temperature :
- -
- Number of Terminals :
- 3
- JEDEC-95 Code :
- TO-5
- Current - Collector (Ic) (Max) :
- 1 A
- ECCN Code :
- EAR99
- Subcategory :
- Transistors
- Vce Saturation (Max) @ Ib, Ic :
- -
- Transistor Type :
- PNP
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Current - Collector Cutoff (Max) :
- -
- Package Shape :
- Round
- Collector Current-Max (IC) :
- 2 A
- Terminal Form :
- Wire
- Qualification Status :
- Not Qualified
- Package :
- Bulk
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- JESD-30 Code :
- O-MBCY-W3
- Transistor Polarity :
- PNP
- Power Dissipation-Max (Abs) :
- 5 W
- Power - Max :
- 5 W
- Product Category :
- Bipolar Transistors - BJT
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Datasheets
- 2N3776
PNP - - 1 Elements SILICON PNP TO-205AA, TO-5-3 Metal Can Through Hole
2N3776 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is -.When VCE saturation is -, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-5AA contains the product.Voltage maximal between collector and emitter is set to 80 V.The device has a 80 V maximal voltage - Collector Emitter Breakdown.
2N3776 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-5AA
2N3776 Applications
There are a lot of Microchip Technology
2N3776 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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