2N3700
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- Mfr.Part #
- 2N3700
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO18
- Stock
- 16,770
- In Stock ：
- 16,770
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Power - Max :
- 500mW
- Current - Collector Cutoff (Max) :
- 10nA
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2007
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Supplier Device Package :
- TO-18
- Min Operating Temperature :
- -65°C
- Number of Elements :
- 1
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Current - Collector (Ic) (Max) :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 140V
- Power Dissipation :
- 500mW
- Polarity :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Operating Temperature :
- 200°C
- Transistor Type :
- NPN
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Operating Temperature :
- -65°C~200°C TJ
- Datasheets
- 2N3700
NPN -65°C~200°C TJ 10nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N3700 Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Supplier device package TO-18 comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 1A volts.
2N3700 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the supplier device package of TO-18
2N3700 Applications
There are a lot of Microsemi Corporation
2N3700 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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