2N3700P
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- Mfr.Part #
- 2N3700P
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 39,217
- In Stock ：
- 39,217
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA
- Product Category :
- Bipolar Transistors - BJT
- Brand :
- Microchip Technology
- Product Status :
- Active
- Supplier Device Package :
- TO-18 (TO-206AA)
- Package :
- Bulk
- Mounting Type :
- Through Hole
- Manufacturer :
- Microchip
- Current - Collector (Ic) (Max) :
- 1 A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Product Type :
- BJTs - Bipolar Transistors
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Frequency - Transition :
- -
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Power - Max :
- 500 mW
- Subcategory :
- Transistors
- Series :
- -
- Datasheets
- 2N3700P
NPN -65°C ~ 200°C (TJ) 10nA TO-206AA, TO-18-3 Metal Can Through Hole
2N3700P Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA, 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.TO-18 (TO-206AA) is the supplier device package for this product.This device displays a 80 V maximum voltage - Collector Emitter Breakdown.
2N3700P Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-18 (TO-206AA)
2N3700P Applications
There are a lot of Microchip Technology
2N3700P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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