2N3700UB
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- Mfr.Part #
- 2N3700UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A UB
- Stock
- 1,796
- In Stock ：
- 1,796
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 140V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Max Collector Current :
- 1A
- Terminal Finish :
- TIN LEAD
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 500mW
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -65°C~200°C TJ
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 500mW
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Package / Case :
- 3-SMD, No Lead
- Mounting Type :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Additional Feature :
- High Reliability
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Emitter Base Voltage (VEBO) :
- 7V
- Published :
- 2007
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Datasheets
- 2N3700UB
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
2N3700UB Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2N3700UB Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
2N3700UB Applications
There are a lot of Microsemi Corporation
2N3700UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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