2N3700UB
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- Mfr.Part #
- 2N3700UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A UB
- Stock
- 1,796
- In Stock ：
- 1,796
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Number of Pins :
- 3
- Additional Feature :
- High Reliability
- Collector Base Voltage (VCBO) :
- 140V
- Collector Emitter Voltage (VCEO) :
- 80V
- Power Dissipation :
- 500mW
- JESD-609 Code :
- e0
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Package / Case :
- 3-SMD, No Lead
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Pbfree Code :
- No
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Terminal Finish :
- TIN LEAD
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Collector Emitter Breakdown Voltage :
- 80V
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Max Power Dissipation :
- 500mW
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Datasheets
- 2N3700UB
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
2N3700UB Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2N3700UB Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
2N3700UB Applications
There are a lot of Microsemi Corporation
2N3700UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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