2N3700UB
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- Mfr.Part #
- 2N3700UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A UB
- Stock
- 1,796
- In Stock ：
- 1,796
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- TIN LEAD
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 500mA 10V
- Collector Base Voltage (VCBO) :
- 140V
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Additional Feature :
- High Reliability
- Packaging :
- Bulk
- Max Collector Current :
- 1A
- Operating Temperature :
- -65°C~200°C TJ
- Max Power Dissipation :
- 500mW
- Published :
- 2007
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 7V
- Package / Case :
- 3-SMD, No Lead
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Configuration :
- Single
- Power Dissipation :
- 500mW
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Factory Lead Time :
- 8 Weeks
- Datasheets
- 2N3700UB
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
2N3700UB Overview
In this device, the DC current gain is 50 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2N3700UB Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
2N3700UB Applications
There are a lot of Microsemi Corporation
2N3700UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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