2N3773
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- Mfr.Part #
- 2N3773
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 28,061
- In Stock ：
- 28,061
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 150W
- Number of Pins :
- 2
- Base Part Number :
- 2N3773
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 800mA, 8A
- Number of Elements :
- 1
- Package / Case :
- TO-204AA, TO-3
- Emitter Base Voltage (VEBO) :
- 7V
- REACH SVHC :
- No SVHC
- Weight :
- 13.607771g
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 1.4V
- Transistor Application :
- SWITCHING
- hFE Min :
- 15
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Height :
- 8.51mm
- Current Rating :
- 16A
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 16A
- Factory Lead Time :
- 10 Weeks
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 140V
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Operating Temperature :
- -65°C~200°C TJ
- Packaging :
- Tray
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Length :
- 39.37mm
- Max Power Dissipation :
- 150W
- Terminal Position :
- BOTTOM
- Published :
- 2004
- Voltage - Rated DC :
- 140V
- Current - Collector Cutoff (Max) :
- 10mA
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 140V
- Pin Count :
- 2
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Base Voltage (VCBO) :
- 160V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- PIN/PEG
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Width :
- 26.67mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- 2N3773
NPN -65°C~200°C TJ 10mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3773G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 8A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 16A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 16A volts.
2N3773G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is 16A
2N3773G Applications
There are a lot of ON Semiconductor
2N3773G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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