2N3737
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- Mfr.Part #
- 2N3737
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A TO46-3
- Stock
- 34,930
- In Stock ：
- 34,930
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 75V
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Position :
- Dual
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1A 1.5V
- Emitter Base Voltage (VEBO) :
- 5V
- Turn Off Time-Max (toff) :
- 60ns
- Turn On Time-Max (ton) :
- 48ns
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 40V
- Pin Count :
- 3
- Package / Case :
- 3-SMD, No Lead
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1.5A
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Max Power Dissipation :
- 500mW
- Power Dissipation :
- 500mW
- Number of Elements :
- 1
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Surface Mount
- Published :
- 2007
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Datasheets
- 2N3737
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NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
2N3737UB Overview
This device has a DC current gain of 20 @ 1A 1.5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 900mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1.5A volts is possible.
2N3737UB Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2N3737UB Applications
There are a lot of Microsemi Corporation
2N3737UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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