2N3715
- Mfr.Part #
- 2N3715
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.001A TO3
- Stock
- 18,400
- In Stock :
- 18,400
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Min Operating Temperature :
- -65°C
- Published :
- 2016
- Current - Collector (Ic) (Max) :
- 10A
- Polarity :
- NPN
- Case Connection :
- COLLECTOR
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-3
- Collector Emitter Saturation Voltage :
- 800mV
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- JESD-30 Code :
- O-MBFM-P2
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A, 2V
- Transistor Type :
- NPN
- Number of Terminations :
- 2
- Frequency - Transition :
- 4MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Gain Bandwidth Product :
- 4MHz
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- HTS Code :
- 8541.29.00.95
- Current - Collector Cutoff (Max) :
- --
- Supplier Device Package :
- TO-3
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 10A
- DC Current Gain-Min (hFE) :
- 30
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Pin Count :
- 2
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 500mA, 5A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mounting Type :
- Through Hole
- Terminal Form :
- PIN/PEG
- Factory Lead Time :
- 12 Weeks
- Transition Frequency :
- 4MHz
- Series :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 150W
- Collector Emitter Voltage (VCEO) :
- 800mV
- Max Operating Temperature :
- 150°C
- Power - Max :
- 150W
- Packaging :
- Tube
- hFE Min :
- 50
- JESD-609 Code :
- e0
- Datasheets
- 2N3715

NPN -65°C ~ 200°C (TJ) -- 1 Elements 2 Terminations TO-3 Tube Through Hole
2N3715 Overview
DC current gain in this device equals 50 @ 1A, 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 800mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 500mA, 5A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 4MHz.Product comes in TO-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 10A volts.
2N3715 Features
the DC current gain for this device is 50 @ 1A, 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
the supplier device package of TO-3
2N3715 Applications
There are a lot of Central Semiconductor
2N3715 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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