2N2484
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- Mfr.Part #
- 2N2484
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.05A TO18
- Stock
- 5,389
- In Stock ：
- 5,389
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 360mW
- Current - Collector Cutoff (Max) :
- 2nA
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Factory Lead Time :
- 12 Weeks
- Current - Collector (Ic) (Max) :
- 50mA
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Supplier Device Package :
- TO-18
- Operating Temperature :
- -65°C~200°C TJ
- Max Operating Temperature :
- 200°C
- Polarity :
- NPN
- Min Operating Temperature :
- -65°C
- Number of Pins :
- 3
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 60V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100µA, 1mA
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Power Dissipation :
- 360mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 225 @ 10mA 5V
- Emitter Base Voltage (VEBO) :
- 6V
- Power - Max :
- 360mW
- Max Collector Current :
- 50mA
- Datasheets
- 2N2484
NPN -65°C~200°C TJ 2nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2484 Overview
In this device, the DC current gain is 225 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 100μA, 1mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Supplier device package TO-18 comes with the product.The device exhibits a collector-emitter breakdown at 60V.Maximum collector currents can be below 50mA volts.
2N2484 Features
the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA
the emitter base voltage is kept at 6V
the supplier device package of TO-18
2N2484 Applications
There are a lot of Microsemi Corporation
2N2484 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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