2N2432UB

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Mfr.Part #
2N2432UB
Manufacturer
Microchip Technology
Package / Case
4-SMD, No Lead
Datasheet
Download
Description
TRANS NPN 30V 0.1A UB
Stock
42,663
In Stock :
42,663

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
12 Weeks
Mounting Type :
Surface Mount
Published :
2007
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) :
10nA
Voltage - Collector Emitter Breakdown (Max) :
30V
Current - Collector (Ic) (Max) :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 1mA 5V
Power - Max :
360mW
Package / Case :
4-SMD, No Lead
Supplier Device Package :
UB
Operating Temperature :
-65°C~200°C TJ
Datasheets
2N2432UB
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N2432UB from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:4-SMD, No Lead, Operating Temperature:-65°C~200°C TJ, 2N2432UB pinout, 2N2432UB datasheet PDF, 2N2432UB amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N2432UB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~200°C TJ 10nA 4-SMD, No Lead Surface Mount

2N2432UB Overview


In this device, the DC current gain is 80 @ 1mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 150mV @ 500μA, 10mA.Supplier device package UB comes with the product.The device exhibits a collector-emitter breakdown at 30V.

2N2432UB Features


the DC current gain for this device is 80 @ 1mA 5V
the vce saturation(Max) is 150mV @ 500μA, 10mA
the supplier device package of UB


2N2432UB Applications


There are a lot of Microsemi Corporation
2N2432UB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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