2N2432UB/TR
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- Mfr.Part #
- 2N2432UB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 35,711
- In Stock ：
- 35,711
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- -
- Manufacturer :
- Microchip
- Package / Case :
- 3-SMD, No Lead
- Product Type :
- BJTs - Bipolar Transistors
- Current - Collector (Ic) (Max) :
- 100 mA
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Brand :
- Microchip Technology
- Series :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 30 V
- Subcategory :
- Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1mA, 5V
- Product Category :
- Bipolar Transistors - BJT
- Supplier Device Package :
- UB
- Current - Collector Cutoff (Max) :
- 10nA
- Power - Max :
- 360 mW
- Transistor Type :
- NPN
- Package :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Product Status :
- Active
- Datasheets
- 2N2432UB/TR
NPN -65°C ~ 200°C (TJ) 10nA 3-SMD, No Lead Surface Mount
2N2432UB/TR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1mA, 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 150mV @ 500μA, 10mA.The product comes in the supplier device package of UB.A 30 V maximal voltage - Collector Emitter Breakdown is present in the device.
2N2432UB/TR Features
the DC current gain for this device is 80 @ 1mA, 5V
the vce saturation(Max) is 150mV @ 500μA, 10mA
the supplier device package of UB
2N2432UB/TR Applications
There are a lot of Microchip Technology
2N2432UB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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