2N2405

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Collector Base Voltage (VCBO) :

120V

DC Current Gain-Min (hFE) :

60

Collector Emitter Breakdown Voltage :

90V

JESD-30 Code :

O-MBCY-W3

Collector Emitter Voltage (VCEO) :

500mV

Emitter Base Voltage (VEBO) :

7V

Package / Case :

TO-39

Transistor Element Material :

SILICON

Max Collector Current :

1A

Frequency - Transition :

120MHz

Factory Lead Time :

8 Weeks

hFE Min :

60

Gain Bandwidth Product :

50MHz

Transistor Application :

SWITCHING

Pin Count :

3

Number of Terminations :

3

Terminal Form :

Wire

Operating Temperature (Max) :

200°C

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Power Dissipation-Max :

1W

Mount :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

BOTTOM

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transition Frequency :

50MHz

Published :

2006

ECCN Code :

EAR99

Pbfree Code :

No

RoHS Status :

RoHS Compliant

Polarity :

NPN

Collector Emitter Saturation Voltage :

500mV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED