2N2369

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - RF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN LEAD

Collector-Base Capacitance-Max :

4pF

Collector Emitter Breakdown Voltage :

15V

Mount :

Through Hole

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 1V

Radiation Hardening :

No

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Operating Temperature :

-65°C~200°C TJ

Emitter Base Voltage (VEBO) :

4.5V

Collector Base Voltage (VCBO) :

40V

Collector Emitter Voltage (VCEO) :

15V

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Package / Case :

TO-206AA, TO-18-3 Metal Can

Pbfree Code :

No

Published :

2002

Lead Free :

Contains Lead

ECCN Code :

EAR99

Max Power Dissipation :

360mW

Transistor Application :

SWITCHING

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Power Dissipation :

360mW

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

VCEsat-Max :

0.45 V

Polarity/Channel Type :

NPN

Number of Elements :

1

Configuration :

Single

Number of Pins :

3

Contact Plating :

Lead, Tin

Terminal Form :

Wire

Transition Frequency :

500MHz

Transistor Type :

NPN

Max Collector Current :

400nA

Packaging :

Bulk

RoHS Status :

Non-RoHS Compliant

Case Connection :

COLLECTOR

Terminal Position :

BOTTOM