2N2369

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Vce Saturation (Max) @ Ib, Ic :

450mV @ 10mA, 100mA

Pin Count :

3

Published :

2002

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

40V

Collector Emitter Voltage (VCEO) :

15V

Terminal Form :

Wire

Max Power Dissipation :

360mW

Pbfree Code :

No

Max Collector Current :

400nA

Case Connection :

COLLECTOR

Packaging :

Bulk

Configuration :

Single

Radiation Hardening :

No

ECCN Code :

EAR99

Package / Case :

TO-206AA, TO-18-3 Metal Can

Emitter Base Voltage (VEBO) :

4.5V

Collector-Base Capacitance-Max :

4pF

Lead Free :

Contains Lead

Power Dissipation :

360mW

RoHS Status :

Non-RoHS Compliant

Mount :

Through Hole

Transistor Type :

NPN

Terminal Position :

BOTTOM

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Transition Frequency :

500MHz

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~200°C TJ

Contact Plating :

Lead, Tin

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Terminal Finish :

TIN LEAD

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 100mA 1V

VCEsat-Max :

0.45 V

Collector Emitter Breakdown Voltage :

15V