1214-110M

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Gain :

7.4dB

Mounting Type :

Chassis Mount

Packaging :

Bulk

Power - Max :

270W

Transistor Type :

NPN

Configuration :

Single

Package / Case :

55KT

Pin Count :

3

Pbfree Code :

No

Max Power Dissipation :

270W

Operating Temperature :

200°C TJ

Collector Emitter Voltage (VCEO) :

75V

RoHS Status :

RoHS Compliant

Terminal Position :

Dual

JESD-30 Code :

R-CDFM-F2

Number of Terminations :

2

Number of Elements :

1

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Transistor Application :

AMPLIFIER

Frequency - Transition :

1.2GHz~1.4GHz

ECCN Code :

EAR99

Published :

2000

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

32 Weeks

Mount :

Chassis Mount, Screw

Terminal Finish :

TIN LEAD

Lead Free :

Lead Free

Highest Frequency Band :

L B

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Base

Max Collector Current :

8A

Qualification Status :

Not Qualified

Number of Pins :

55

JESD-609 Code :

e0

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)