10A030

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

1.5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 200mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

200°C TJ

Contact Plating :

Tin

Max Power Dissipation :

13W

Power Dissipation :

13W

Gain :

7.8dB ~ 8.5dB

Voltage - Collector Emitter Breakdown (Max) :

24V

Max Operating Temperature :

200°C

Number of Elements :

1

Min Operating Temperature :

-65°C

Package / Case :

55FT

Emitter Base Voltage (VEBO) :

3.5V

Collector Emitter Voltage (VCEO) :

24V

Packaging :

Bulk

Frequency - Transition :

2.5GHz

Collector Emitter Breakdown Voltage :

24V

RoHS Status :

RoHS Compliant

Factory Lead Time :

13 Weeks

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Polarity :

NPN

Supplier Device Package :

55FT

Mounting Type :

Stud Mount

Power - Max :

13W

Max Collector Current :

1.5A

Mount :

Stud

Number of Pins :

55

Published :

1996