0912-25

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Power Dissipation :

125W

Radiation Hardening :

No

Transistor Type :

NPN

Mounting Type :

Chassis Mount

Terminal Position :

Dual

Contact Plating :

Tin

Operating Temperature :

200°C TJ

Pin Count :

2

Collector Emitter Breakdown Voltage :

55V

Collector Emitter Voltage (VCEO) :

60V

Max Power Dissipation :

125W

Number of Terminations :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 300mA 5V

Frequency - Transition :

960MHz~1.215GHz

Mount :

Chassis Mount, Screw

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Pbfree Code :

No

Package / Case :

55CT

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Number of Pins :

55

Frequency :

1.215GHz

Transistor Application :

AMPLIFIER

Packaging :

Bulk

Emitter Base Voltage (VEBO) :

4V

JESD-609 Code :

e0

Configuration :

Single

JESD-30 Code :

R-CDFM-F2

Gain :

8.5dB ~ 10dB

Max Collector Current :

2.5A

RoHS Status :

RoHS Compliant