0912-25

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Radiation Hardening :

No

Max Power Dissipation :

125W

Max Collector Current :

2.5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 300mA 5V

Power Dissipation :

125W

Frequency :

1.215GHz

JESD-609 Code :

e0

Configuration :

Single

Collector Emitter Voltage (VCEO) :

60V

Mount :

Chassis Mount, Screw

Frequency - Transition :

960MHz~1.215GHz

Gain :

8.5dB ~ 10dB

Pbfree Code :

No

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Position :

Dual

Terminal Form :

Flat

Packaging :

Bulk

Number of Terminations :

2

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

55CT

Polarity/Channel Type :

NPN

Contact Plating :

Tin

JESD-30 Code :

R-CDFM-F2

Transistor Type :

NPN

Number of Pins :

55

Pin Count :

2

RoHS Status :

RoHS Compliant

Operating Temperature :

200°C TJ

Emitter Base Voltage (VEBO) :

4V

Number of Elements :

1

Collector Emitter Breakdown Voltage :

55V

Mounting Type :

Chassis Mount