0912-25

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Radiation Hardening :

No

Operating Temperature :

200°C TJ

Packaging :

Bulk

JESD-609 Code :

e0

Package / Case :

55CT

Max Collector Current :

2.5A

Max Power Dissipation :

125W

Pin Count :

2

Collector Emitter Voltage (VCEO) :

60V

Mount :

Chassis Mount, Screw

Power Dissipation :

125W

Emitter Base Voltage (VEBO) :

4V

Mounting Type :

Chassis Mount

Frequency - Transition :

960MHz~1.215GHz

Transistor Type :

NPN

Frequency :

1.215GHz

Pbfree Code :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 300mA 5V

Polarity/Channel Type :

NPN

JESD-30 Code :

R-CDFM-F2

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

55V

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Configuration :

Single

Number of Pins :

55

Terminal Form :

Flat

Number of Elements :

1

Gain :

8.5dB ~ 10dB

Terminal Position :

Dual

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant