ZXTP717MATA
- Mfr.Part #
- ZXTP717MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 12V 4.5A 3DFN
- Stock
- 17,635
- In Stock :
- 17,635
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Max Power Dissipation :
- 2.45W
- Width :
- 2.075mm
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Factory Lead Time :
- 17 Weeks
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Collector Emitter Voltage (VCEO) :
- 12V
- Gain Bandwidth Product :
- 110MHz
- Pin Count :
- 3
- Power Dissipation :
- 2.45W
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e4
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Length :
- 2.08mm
- Power - Max :
- 3W
- Current - Collector (Ic) (Max) :
- 4.5A
- Collector Emitter Breakdown Voltage :
- 12V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Height :
- 580μm
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 110MHz
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 4A
- Transition Frequency :
- 110MHz
- Pbfree Code :
- yes
- Package / Case :
- 3-UDFN Exposed Pad
- Emitter Base Voltage (VEBO) :
- -7.5V
- Frequency - Transition :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 12V
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 150mA, 4A
- Continuous Collector Current :
- -4A
- Published :
- 2016
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 20V
- Collector Emitter Saturation Voltage :
- -310mV
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- High Reliability
- Packaging :
- Digi-Reel®
- Datasheets
- ZXTP717MATA

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-UDFN Exposed Pad Digi-Reel® Surface Mount
ZXTP717MATA Overview
This device has a DC current gain of 300 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -310mV.A VCE saturation (Max) of 310mV @ 150mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7.5V.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4A volts is possible.
ZXTP717MATA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -310mV
the vce saturation(Max) is 310mV @ 150mA, 4A
the emitter base voltage is kept at -7.5V
a transition frequency of 110MHz
ZXTP717MATA Applications
There are a lot of Diodes Incorporated
ZXTP717MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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