ZXTP717MATA
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- Mfr.Part #
- ZXTP717MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 12V 4.5A 3DFN
- Stock
- 17,635
- In Stock ：
- 17,635
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 4.5A
- Max Power Dissipation :
- 2.45W
- Collector Emitter Saturation Voltage :
- -310mV
- Frequency :
- 110MHz
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 4A
- Width :
- 2.075mm
- Length :
- 2.08mm
- JESD-609 Code :
- e4
- Transition Frequency :
- 110MHz
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 17 Weeks
- Collector Base Voltage (VCBO) :
- 20V
- Packaging :
- Digi-Reel®
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- -7.5V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Power - Max :
- 3W
- Additional Feature :
- High Reliability
- Continuous Collector Current :
- -4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Power Dissipation :
- 2.45W
- Collector Emitter Voltage (VCEO) :
- 12V
- Max Breakdown Voltage :
- 12V
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 150mA, 4A
- Number of Terminations :
- 3
- Height :
- 580μm
- Published :
- 2016
- Case Connection :
- COLLECTOR
- Package / Case :
- 3-UDFN Exposed Pad
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 12V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 110MHz
- Datasheets
- ZXTP717MATA
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-UDFN Exposed Pad Digi-Reel® Surface Mount
ZXTP717MATA Overview
This device has a DC current gain of 300 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -310mV.A VCE saturation (Max) of 310mV @ 150mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7.5V.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4A volts is possible.
ZXTP717MATA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -310mV
the vce saturation(Max) is 310mV @ 150mA, 4A
the emitter base voltage is kept at -7.5V
a transition frequency of 110MHz
ZXTP717MATA Applications
There are a lot of Diodes Incorporated
ZXTP717MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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