ZXTP717MATA
- Mfr.Part #
- ZXTP717MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 12V 4.5A 3DFN
- Stock
- 17,635
- In Stock :
- 17,635
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 4A
- Length :
- 2.08mm
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Power - Max :
- 3W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 12V
- Emitter Base Voltage (VEBO) :
- -7.5V
- Width :
- 2.075mm
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 17 Weeks
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 12V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Pin Count :
- 3
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Continuous Collector Current :
- -4A
- Max Power Dissipation :
- 2.45W
- Gain Bandwidth Product :
- 110MHz
- Transistor Application :
- SWITCHING
- Packaging :
- Digi-Reel®
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 2.45W
- Collector Base Voltage (VCBO) :
- 20V
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 12V
- Frequency - Transition :
- 100MHz
- Height :
- 580μm
- Transition Frequency :
- 110MHz
- JESD-609 Code :
- e4
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -310mV
- Published :
- 2016
- Additional Feature :
- High Reliability
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 150mA, 4A
- Current - Collector Cutoff (Max) :
- 100nA
- Package / Case :
- 3-UDFN Exposed Pad
- Current - Collector (Ic) (Max) :
- 4.5A
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Frequency :
- 110MHz
- Datasheets
- ZXTP717MATA

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-UDFN Exposed Pad Digi-Reel® Surface Mount
ZXTP717MATA Overview
This device has a DC current gain of 300 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -310mV.A VCE saturation (Max) of 310mV @ 150mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7.5V.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4A volts is possible.
ZXTP717MATA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -310mV
the vce saturation(Max) is 310mV @ 150mA, 4A
the emitter base voltage is kept at -7.5V
a transition frequency of 110MHz
ZXTP717MATA Applications
There are a lot of Diodes Incorporated
ZXTP717MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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