ZXTP5401FLTA
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- Mfr.Part #
- ZXTP5401FLTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A SOT23-3
- Stock
- 13,472
- In Stock ：
- 13,472
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Weight :
- 7.994566mg
- Collector Emitter Saturation Voltage :
- -500mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 160V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Terminations :
- 3
- Width :
- 1.4mm
- Height :
- 1.02mm
- Collector Emitter Voltage (VCEO) :
- 150V
- Max Power Dissipation :
- 330mW
- Transistor Element Material :
- SILICON
- Base Part Number :
- ZXTP5401
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Collector Emitter Breakdown Voltage :
- 150V
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 150V
- Max Collector Current :
- 600mA
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2007
- Power Dissipation :
- 330mW
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Length :
- 3.04mm
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Factory Lead Time :
- 15 Weeks
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- ZXTP5401FLTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP5401FLTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 600mA volts.
ZXTP5401FLTA Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
ZXTP5401FLTA Applications
There are a lot of Diodes Incorporated
ZXTP5401FLTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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