ZXTP4003GTA
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- Mfr.Part #
- ZXTP4003GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT89-3
- Stock
- 105,841
- In Stock ：
- 105,841
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Position :
- Dual
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 2W
- Weight :
- 7.994566mg
- Max Collector Current :
- 1A
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- -7V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Power - Max :
- 2W
- Reference Standard :
- AEC-Q101
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- -1A
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Additional Feature :
- High Reliability
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-243AA
- JESD-30 Code :
- R-PDSO-G4
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 200mV
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Cut Tape (CT)
- Collector Emitter Voltage (VCEO) :
- -100V
- Datasheets
- ZXTP4003GTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
ZXTP4003GTA Overview
In this device, the DC current gain is 100 @ 150mA 200mV, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Keeping the emitter base voltage at -7V allows for a high level of efficiency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
ZXTP4003GTA Features
the DC current gain for this device is 100 @ 150mA 200mV
the emitter base voltage is kept at -7V
ZXTP4003GTA Applications
There are a lot of Diodes Incorporated
ZXTP4003GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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