ZXTP25100CZTA
- Mfr.Part #
- ZXTP25100CZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT89-3
- Stock
- 503
- In Stock :
- 503
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-F3
- Power Dissipation :
- 4.46W
- Frequency :
- 180MHz
- Transition Frequency :
- 180MHz
- Lead Free :
- Lead Free
- Terminal Form :
- Flat
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 2.4W
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 115V
- Height :
- 1.6mm
- Base Part Number :
- ZXTP25100C
- Max Power Dissipation :
- 4.46W
- Width :
- 2.6mm
- Gain Bandwidth Product :
- 180MHz
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Weight :
- 51.993025mg
- Collector Emitter Saturation Voltage :
- -225mV
- Case Connection :
- COLLECTOR
- Published :
- 2007
- Transistor Type :
- PNP
- Length :
- 4.6mm
- Package / Case :
- TO-243AA
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 100V
- Datasheets
- ZXTP25100CZTA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP25100CZTA Overview
In this device, the DC current gain is 200 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -225mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 225mV @ 100mA, 1A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.180MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
ZXTP25100CZTA Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -225mV
the vce saturation(Max) is 225mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
ZXTP25100CZTA Applications
There are a lot of Diodes Incorporated
ZXTP25100CZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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