ZXTP25100CZTA
- Mfr.Part #
- ZXTP25100CZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT89-3
- Stock
- 503
- In Stock :
- 503
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Number of Pins :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 1A
- Frequency :
- 180MHz
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- JESD-30 Code :
- R-PSSO-F3
- Max Power Dissipation :
- 4.46W
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 180MHz
- Package / Case :
- TO-243AA
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 180MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Case Connection :
- COLLECTOR
- Terminal Form :
- Flat
- Power - Max :
- 2.4W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Number of Terminations :
- 3
- Weight :
- 51.993025mg
- Element Configuration :
- Single
- Width :
- 2.6mm
- Base Part Number :
- ZXTP25100C
- Lead Free :
- Lead Free
- Power Dissipation :
- 4.46W
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 100mA, 1A
- Transistor Type :
- PNP
- Height :
- 1.6mm
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 115V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Max Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 4.6mm
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- -225mV
- Datasheets
- ZXTP25100CZTA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP25100CZTA Overview
In this device, the DC current gain is 200 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -225mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 225mV @ 100mA, 1A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.180MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
ZXTP25100CZTA Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -225mV
the vce saturation(Max) is 225mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
ZXTP25100CZTA Applications
There are a lot of Diodes Incorporated
ZXTP25100CZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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