ZXTP25100CZTA
- Mfr.Part #
- ZXTP25100CZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT89-3
- Stock
- 503
- In Stock :
- 503
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 115V
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 1A
- Length :
- 4.6mm
- Terminal Finish :
- Matte Tin (Sn)
- Frequency :
- 180MHz
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 180MHz
- Height :
- 1.6mm
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 180MHz
- Base Part Number :
- ZXTP25100C
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 2.6mm
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 4.46W
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- -225mV
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Pbfree Code :
- yes
- Package / Case :
- TO-243AA
- Power - Max :
- 2.4W
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Weight :
- 51.993025mg
- Vce Saturation (Max) @ Ib, Ic :
- 225mV @ 100mA, 1A
- JESD-30 Code :
- R-PSSO-F3
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 4.46W
- Element Configuration :
- Single
- Published :
- 2007
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Number of Pins :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Datasheets
- ZXTP25100CZTA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP25100CZTA Overview
In this device, the DC current gain is 200 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -225mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 225mV @ 100mA, 1A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.180MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
ZXTP25100CZTA Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -225mV
the vce saturation(Max) is 225mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 180MHz
ZXTP25100CZTA Applications
There are a lot of Diodes Incorporated
ZXTP25100CZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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