ZXTP25100CZTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

50nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 10mA 2V

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

180MHz

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

225mV @ 100mA, 1A

Radiation Hardening :

No

Frequency :

180MHz

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

100V

Polarity/Channel Type :

PNP

Number of Elements :

1

Transistor Type :

PNP

Mount :

Surface Mount

Length :

4.6mm

Package / Case :

TO-243AA

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

100V

Height :

1.6mm

Published :

2007

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

100V

Pbfree Code :

yes

Number of Pins :

4

JESD-30 Code :

R-PSSO-F3

Terminal Finish :

Matte Tin (Sn)

Power - Max :

2.4W

Collector Emitter Saturation Voltage :

-225mV

ECCN Code :

EAR99

Pin Count :

3

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Power Dissipation :

4.46W

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

180MHz

Max Collector Current :

1A

Collector Base Voltage (VCBO) :

115V

Emitter Base Voltage (VEBO) :

7V

Base Part Number :

ZXTP25100C

Width :

2.6mm

Terminal Form :

Flat

Weight :

51.993025mg

Element Configuration :

Single

Max Power Dissipation :

4.46W

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

15 Weeks