ZXTP25012EZTA
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- Mfr.Part #
- ZXTP25012EZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 12V 4.5A SOT89-3
- Stock
- 23,757
- In Stock ：
- 23,757
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Frequency :
- 310MHz
- Gain Bandwidth Product :
- 310MHz
- Height :
- 1.6mm
- Terminal Form :
- Flat
- Polarity/Channel Type :
- PNP
- Width :
- 2.6mm
- Vce Saturation (Max) @ Ib, Ic :
- 285mV @ 450mA, 4.5A
- Pin Count :
- 3
- Number of Elements :
- 1
- Power - Max :
- 2.4W
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -7V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 4.6mm
- Number of Pins :
- 4
- Continuous Collector Current :
- -4.5A
- Transition Frequency :
- 310MHz
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 12V
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 12V
- Max Collector Current :
- 4.5A
- Base Part Number :
- ZXTP25012E
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Weight :
- 130.492855mg
- Collector Base Voltage (VCBO) :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 12V
- Collector Emitter Saturation Voltage :
- -70mV
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 19.2W
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2007
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-243AA
- Power Dissipation :
- 19.2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- JESD-30 Code :
- R-PSSO-F3
- Lead Free :
- Lead Free
- Datasheets
- ZXTP25012EZTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP25012EZTA Overview
In this device, the DC current gain is 500 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -70mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 285mV @ 450mA, 4.5A.A -4.5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 310MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.
ZXTP25012EZTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -70mV
the vce saturation(Max) is 285mV @ 450mA, 4.5A
the emitter base voltage is kept at -7V
a transition frequency of 310MHz
ZXTP25012EZTA Applications
There are a lot of Diodes Incorporated
ZXTP25012EZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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