ZXTP25012EZTA
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- Mfr.Part #
- ZXTP25012EZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 12V 4.5A SOT89-3
- Stock
- 23,757
- In Stock ：
- 23,757
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Terminations :
- 3
- Power - Max :
- 2.4W
- Collector Emitter Voltage (VCEO) :
- 12V
- Transistor Type :
- PNP
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 285mV @ 450mA, 4.5A
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- -70mV
- Collector Emitter Breakdown Voltage :
- 12V
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-F3
- Max Breakdown Voltage :
- 12V
- Weight :
- 130.492855mg
- Base Part Number :
- ZXTP25012E
- ECCN Code :
- EAR99
- Continuous Collector Current :
- -4.5A
- Transition Frequency :
- 310MHz
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Published :
- 2007
- Gain Bandwidth Product :
- 310MHz
- Package / Case :
- TO-243AA
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Number of Pins :
- 4
- Width :
- 2.6mm
- Radiation Hardening :
- No
- Power Dissipation :
- 19.2W
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 19.2W
- Max Collector Current :
- 4.5A
- Height :
- 1.6mm
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -7V
- Number of Elements :
- 1
- Terminal Form :
- Flat
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 310MHz
- Length :
- 4.6mm
- Datasheets
- ZXTP25012EZTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP25012EZTA Overview
In this device, the DC current gain is 500 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -70mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 285mV @ 450mA, 4.5A.A -4.5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 310MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.
ZXTP25012EZTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -70mV
the vce saturation(Max) is 285mV @ 450mA, 4.5A
the emitter base voltage is kept at -7V
a transition frequency of 310MHz
ZXTP25012EZTA Applications
There are a lot of Diodes Incorporated
ZXTP25012EZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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