ZXTP25012EZTA
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- Mfr.Part #
- ZXTP25012EZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 12V 4.5A SOT89-3
- Stock
- 23,757
- In Stock ：
- 23,757
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 12V
- Collector Emitter Saturation Voltage :
- -70mV
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- -4.5A
- Power - Max :
- 2.4W
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 20V
- Number of Pins :
- 4
- Pin Count :
- 3
- Package / Case :
- TO-243AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- ZXTP25012E
- Frequency :
- 310MHz
- Max Collector Current :
- 4.5A
- Published :
- 2007
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 12V
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 285mV @ 450mA, 4.5A
- Width :
- 2.6mm
- Length :
- 4.6mm
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- JESD-30 Code :
- R-PSSO-F3
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 310MHz
- ECCN Code :
- EAR99
- Weight :
- 130.492855mg
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Height :
- 1.6mm
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- -7V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Power Dissipation :
- 19.2W
- Collector Emitter Voltage (VCEO) :
- 12V
- Transition Frequency :
- 310MHz
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 19.2W
- Datasheets
- ZXTP25012EZTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP25012EZTA Overview
In this device, the DC current gain is 500 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -70mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 285mV @ 450mA, 4.5A.A -4.5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 310MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 4.5A volts at Single BJT transistors maximum.
ZXTP25012EZTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -70mV
the vce saturation(Max) is 285mV @ 450mA, 4.5A
the emitter base voltage is kept at -7V
a transition frequency of 310MHz
ZXTP25012EZTA Applications
There are a lot of Diodes Incorporated
ZXTP25012EZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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