ZXTP25012EFHTA
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- Mfr.Part #
- ZXTP25012EFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 12V 4A SOT23-3
- Stock
- 6
- In Stock ：
- 6
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 12V
- Collector Emitter Saturation Voltage :
- -210mV
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- Transition Frequency :
- 310MHz
- Length :
- 3.04mm
- Height :
- 1.02mm
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.81W
- Emitter Base Voltage (VEBO) :
- 7V
- Published :
- 2007
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Max Collector Current :
- 4A
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 12V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 12V
- Collector Base Voltage (VCBO) :
- 12V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Gain Bandwidth Product :
- 310MHz
- Number of Pins :
- 3
- Terminal Form :
- Flat
- Max Frequency :
- 310MHz
- Terminal Position :
- Dual
- Base Part Number :
- ZXTP25012E
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.4mm
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 12 Weeks
- Weight :
- 7.994566mg
- Pin Count :
- 3
- Power - Max :
- 1.25W
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Datasheets
- ZXTP25012EFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25012EFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of -210mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 310MHz in the part.Single BJT transistor can be broken down at a voltage of 12V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTP25012EFHTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 310MHz
ZXTP25012EFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25012EFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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