ZXTP25012EFHTA
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- Mfr.Part #
- ZXTP25012EFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 12V 4A SOT23-3
- Stock
- 6
- In Stock ：
- 6
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Base Voltage (VCBO) :
- 12V
- Published :
- 2007
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 7.994566mg
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Height :
- 1.02mm
- Collector Emitter Saturation Voltage :
- -210mV
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 310MHz
- Max Collector Current :
- 4A
- Radiation Hardening :
- No
- Length :
- 3.04mm
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 12V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Width :
- 1.4mm
- Base Part Number :
- ZXTP25012E
- Collector Emitter Breakdown Voltage :
- 12V
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 310MHz
- Max Frequency :
- 310MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 1.25W
- Max Power Dissipation :
- 1.81W
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 12V
- Datasheets
- ZXTP25012EFHTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP25012EFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of -210mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 310MHz in the part.Single BJT transistor can be broken down at a voltage of 12V volts.When collector current reaches its maximum, it can reach 4A volts.
ZXTP25012EFHTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 310MHz
ZXTP25012EFHTA Applications
There are a lot of Diodes Incorporated
ZXTP25012EFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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