ZXTP2014ZTA
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- Mfr.Part #
- ZXTP2014ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 140V 3A SOT89-3
- Stock
- 32,482
- In Stock ：
- 32,482
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Rated DC :
- -140V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2.1W
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 140V
- Element Configuration :
- Single
- Package / Case :
- TO-243AA
- Number of Terminations :
- 4
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 140V
- Current Rating :
- -3A
- Height :
- 1.6mm
- Transition Frequency :
- 120MHz
- Published :
- 2006
- Length :
- 4.6mm
- Collector Emitter Saturation Voltage :
- -255mV
- Number of Pins :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 120MHz
- Max Collector Current :
- 3A
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 300mA, 3A
- Frequency :
- 120MHz
- Continuous Collector Current :
- -3A
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 180V
- Pin Count :
- 4
- Number of Elements :
- 1
- Base Part Number :
- ZXTP2014
- Weight :
- 51.993025mg
- Max Breakdown Voltage :
- 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Emitter Base Voltage (VEBO) :
- 7V
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 2.1W
- Width :
- 2.6mm
- Datasheets
- ZXTP2014ZTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP2014ZTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 5V.The collector emitter saturation voltage is -255mV, which allows for maximum design flexibility.When VCE saturation is 330mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -3A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.In the part, the transition frequency is 120MHz.This device can take an input voltage of 140V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
ZXTP2014ZTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -255mV
the vce saturation(Max) is 330mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -3A
a transition frequency of 120MHz
ZXTP2014ZTA Applications
There are a lot of Diodes Incorporated
ZXTP2014ZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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