ZXTP2013GTA
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- Mfr.Part #
- ZXTP2013GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 3.7mm
- Terminal Form :
- Gull wing
- Frequency :
- 125MHz
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 7.994566mg
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.7mm
- Current Rating :
- -5A
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 4
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transition Frequency :
- 125MHz
- JESD-609 Code :
- e3
- Power Dissipation :
- 3W
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Base Part Number :
- ZXTP2013
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- -5A
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 100V
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 5A
- Voltage - Rated DC :
- -100V
- Number of Pins :
- 4
- Max Breakdown Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- -240mV
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Base Voltage (VCBO) :
- 140V
- Polarity/Channel Type :
- PNP
- Published :
- 2006
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 125MHz
- Max Power Dissipation :
- 3W
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Matte Tin (Sn)
- Height :
- 1.65mm
- Number of Terminations :
- 4
- Pbfree Code :
- No
- Package / Case :
- TO-261-4, TO-261AA
- Datasheets
- ZXTP2013GTA
ZXTP2013GTA Documents
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2013GTA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -240mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTP2013GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -5A
a transition frequency of 125MHz
ZXTP2013GTA Applications
There are a lot of Diodes Incorporated
ZXTP2013GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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