ZXTP2013GTA
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- Mfr.Part #
- ZXTP2013GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 125MHz
- Frequency :
- 125MHz
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- -240mV
- Pbfree Code :
- No
- Weight :
- 7.994566mg
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 3W
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Current Rating :
- -5A
- Length :
- 6.7mm
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Width :
- 3.7mm
- Continuous Collector Current :
- -5A
- Collector Base Voltage (VCBO) :
- 140V
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 100V
- Base Part Number :
- ZXTP2013
- Max Power Dissipation :
- 3W
- Published :
- 2006
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -100V
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.65mm
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 125MHz
- Number of Terminations :
- 4
- Max Collector Current :
- 5A
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- Datasheets
- ZXTP2013GTA
ZXTP2013GTA Documents
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2013GTA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -240mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTP2013GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -5A
a transition frequency of 125MHz
ZXTP2013GTA Applications
There are a lot of Diodes Incorporated
ZXTP2013GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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