ZXTP2013GTA

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Mfr.Part #
ZXTP2013GTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 100V 5A SOT223-3
Stock
19
In Stock :
19

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 1V
Collector Base Voltage (VCBO) :
140V
Mounting Type :
Surface Mount
Case Connection :
COLLECTOR
Published :
2006
Max Breakdown Voltage :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
5A
Radiation Hardening :
No
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
100V
Current Rating :
-5A
Transition Frequency :
125MHz
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Pin Count :
4
Continuous Collector Current :
-5A
Transistor Application :
SWITCHING
Max Power Dissipation :
3W
Height :
1.65mm
Length :
6.7mm
Factory Lead Time :
15 Weeks
Width :
3.7mm
Base Part Number :
ZXTP2013
Package / Case :
TO-261-4, TO-261AA
Voltage - Rated DC :
-100V
Emitter Base Voltage (VEBO) :
7V
Lead Free :
Lead Free
Terminal Position :
Dual
Collector Emitter Saturation Voltage :
-240mV
Operating Temperature :
-55°C~150°C TJ
Weight :
7.994566mg
Gain Bandwidth Product :
125MHz
Number of Terminations :
4
Peak Reflow Temperature (Cel) :
260
Power Dissipation :
3W
JESD-609 Code :
e3
REACH SVHC :
No SVHC
Number of Pins :
4
Transistor Element Material :
SILICON
Mount :
Surface Mount
Element Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
40
Pbfree Code :
No
Frequency :
125MHz
Polarity/Channel Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
340mV @ 400mA, 4A
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
100V
Current - Collector Cutoff (Max) :
20nA ICBO
Transistor Type :
PNP
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2013GTA from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:ZXTP2013, Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Number of Pins:4, ZXTP2013GTA pinout, ZXTP2013GTA datasheet PDF, ZXTP2013GTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2013GTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTP2013GTA


PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

ZXTP2013GTA Overview


In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -240mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

ZXTP2013GTA Features


the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -5A
a transition frequency of 125MHz


ZXTP2013GTA Applications


There are a lot of Diodes Incorporated
ZXTP2013GTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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