ZXTP2013GTA
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- Mfr.Part #
- ZXTP2013GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Collector Base Voltage (VCBO) :
- 140V
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Published :
- 2006
- Max Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 5A
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Current Rating :
- -5A
- Transition Frequency :
- 125MHz
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Pin Count :
- 4
- Continuous Collector Current :
- -5A
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 3W
- Height :
- 1.65mm
- Length :
- 6.7mm
- Factory Lead Time :
- 15 Weeks
- Width :
- 3.7mm
- Base Part Number :
- ZXTP2013
- Package / Case :
- TO-261-4, TO-261AA
- Voltage - Rated DC :
- -100V
- Emitter Base Voltage (VEBO) :
- 7V
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- -240mV
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 7.994566mg
- Gain Bandwidth Product :
- 125MHz
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 3W
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- No
- Frequency :
- 125MHz
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transistor Type :
- PNP
- Datasheets
- ZXTP2013GTA
ZXTP2013GTA Documents
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2013GTA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -240mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTP2013GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -5A
a transition frequency of 125MHz
ZXTP2013GTA Applications
There are a lot of Diodes Incorporated
ZXTP2013GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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