ZXTP2013GTA
- Mfr.Part #
- ZXTP2013GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 19
- In Stock :
- 19
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Breakdown Voltage :
- 100V
- Voltage - Rated DC :
- -100V
- Frequency :
- 125MHz
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Current Rating :
- -5A
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 3W
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -240mV
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Width :
- 3.7mm
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- -5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Base Part Number :
- ZXTP2013
- Terminal Form :
- Gull wing
- Case Connection :
- COLLECTOR
- Height :
- 1.65mm
- Emitter Base Voltage (VEBO) :
- 7V
- Transition Frequency :
- 125MHz
- Number of Pins :
- 4
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 5A
- Length :
- 6.7mm
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Max Power Dissipation :
- 3W
- Package / Case :
- TO-261-4, TO-261AA
- Weight :
- 7.994566mg
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 125MHz
- Collector Emitter Breakdown Voltage :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 140V
- Mounting Type :
- Surface Mount
- Datasheets
- ZXTP2013GTA

PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2013GTA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -240mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTP2013GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -5A
a transition frequency of 125MHz
ZXTP2013GTA Applications
There are a lot of Diodes Incorporated
ZXTP2013GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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