ZXTP2013GTA
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- Mfr.Part #
- ZXTP2013GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- ZXTP2013
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 100V
- Transistor Type :
- PNP
- Frequency :
- 125MHz
- Pbfree Code :
- No
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 125MHz
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 4
- Terminal Position :
- Dual
- Power Dissipation :
- 3W
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- Collector Emitter Breakdown Voltage :
- 100V
- Current Rating :
- -5A
- Pin Count :
- 4
- Height :
- 1.65mm
- Package / Case :
- TO-261-4, TO-261AA
- Weight :
- 7.994566mg
- Polarity/Channel Type :
- PNP
- Published :
- 2006
- Collector Emitter Voltage (VCEO) :
- 100V
- Voltage - Rated DC :
- -100V
- Continuous Collector Current :
- -5A
- Length :
- 6.7mm
- Collector Emitter Saturation Voltage :
- -240mV
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 7V
- Width :
- 3.7mm
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 125MHz
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 3W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 140V
- Datasheets
- ZXTP2013GTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2013GTA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -240mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTP2013GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -5A
a transition frequency of 125MHz
ZXTP2013GTA Applications
There are a lot of Diodes Incorporated
ZXTP2013GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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