ZXTP2013GTA
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- Mfr.Part #
- ZXTP2013GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 15 Weeks
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Base Part Number :
- ZXTP2013
- Published :
- 2006
- REACH SVHC :
- No SVHC
- Length :
- 6.7mm
- Max Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 7.994566mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Voltage - Rated DC :
- -100V
- Number of Pins :
- 4
- Width :
- 3.7mm
- Power Dissipation :
- 3W
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 3W
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Transition Frequency :
- 125MHz
- Terminal Position :
- Dual
- Current Rating :
- -5A
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -240mV
- Gain Bandwidth Product :
- 125MHz
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 100V
- Frequency :
- 125MHz
- Collector Base Voltage (VCBO) :
- 140V
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 400mA, 4A
- Pin Count :
- 4
- Max Collector Current :
- 5A
- Polarity/Channel Type :
- PNP
- Height :
- 1.65mm
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- -5A
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- ZXTP2013GTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2013GTA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -240mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZXTP2013GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -5A
a transition frequency of 125MHz
ZXTP2013GTA Applications
There are a lot of Diodes Incorporated
ZXTP2013GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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