ZXTP2013GTA

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Mfr.Part #
ZXTP2013GTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 100V 5A SOT223-3
Stock
19
In Stock :
19

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
100V
Max Breakdown Voltage :
100V
Voltage - Rated DC :
-100V
Frequency :
125MHz
Pin Count :
4
Transistor Application :
SWITCHING
Current Rating :
-5A
Terminal Finish :
Matte Tin (Sn)
Power Dissipation :
3W
Vce Saturation (Max) @ Ib, Ic :
340mV @ 400mA, 4A
Polarity/Channel Type :
PNP
Transistor Type :
PNP
Collector Emitter Saturation Voltage :
-240mV
Terminal Position :
Dual
Lead Free :
Lead Free
JESD-609 Code :
e3
Width :
3.7mm
REACH SVHC :
No SVHC
Time@Peak Reflow Temperature-Max (s) :
40
Continuous Collector Current :
-5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Base Part Number :
ZXTP2013
Terminal Form :
Gull wing
Case Connection :
COLLECTOR
Height :
1.65mm
Emitter Base Voltage (VEBO) :
7V
Transition Frequency :
125MHz
Number of Pins :
4
Mount :
Surface Mount
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Published :
2006
RoHS Status :
ROHS3 Compliant
Max Collector Current :
5A
Length :
6.7mm
Number of Terminations :
4
Current - Collector Cutoff (Max) :
20nA ICBO
Max Power Dissipation :
3W
Package / Case :
TO-261-4, TO-261AA
Weight :
7.994566mg
Transistor Element Material :
SILICON
Gain Bandwidth Product :
125MHz
Collector Emitter Breakdown Voltage :
100V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 1V
Radiation Hardening :
No
Packaging :
Tape and Reel (TR)
Pbfree Code :
No
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
15 Weeks
Collector Base Voltage (VCBO) :
140V
Mounting Type :
Surface Mount
Datasheets
ZXTP2013GTA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2013GTA from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:ZXTP2013, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, ZXTP2013GTA pinout, ZXTP2013GTA datasheet PDF, ZXTP2013GTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2013GTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTP2013GTA


PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

ZXTP2013GTA Overview


In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -240mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 340mV @ 400mA, 4A.A -5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

ZXTP2013GTA Features


the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 340mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -5A
a transition frequency of 125MHz


ZXTP2013GTA Applications


There are a lot of Diodes Incorporated
ZXTP2013GTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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