ZXTP2008ZTA
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- Mfr.Part #
- ZXTP2008ZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5.5A SOT89-3
- Stock
- 582
- In Stock ：
- 582
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- ZXTP2008
- Max Collector Current :
- 5.5A
- Transition Frequency :
- 110MHz
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 50V
- JESD-609 Code :
- e3
- Pbfree Code :
- No
- Weight :
- 51.993025mg
- Packaging :
- Tape and Reel (TR)
- Published :
- 2006
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -175mV
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.6mm
- Width :
- 2.6mm
- Length :
- 4.6mm
- Gain Bandwidth Product :
- 110MHz
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-243AA
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Number of Pins :
- 4
- Terminal Form :
- Flat
- Mount :
- Surface Mount
- Frequency :
- 110MHz
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Voltage - Rated DC :
- -30V
- Vce Saturation (Max) @ Ib, Ic :
- 175mV @ 500mA, 5.5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- -5.5A
- Power Dissipation :
- 2.1W
- Emitter Base Voltage (VEBO) :
- 7V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Transistor Type :
- PNP
- Max Power Dissipation :
- 2.1W
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- hFE Min :
- 100
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 30V
- Factory Lead Time :
- 15 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Pin Count :
- 4
- Datasheets
- ZXTP2008ZTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
ZXTP2008ZTA Overview
In this device, the DC current gain is 100 @ 1A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -175mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 175mV @ 500mA, 5.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5.5A).110MHz is present in the transition frequency.An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 5.5A volts.
ZXTP2008ZTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -175mV
the vce saturation(Max) is 175mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz
ZXTP2008ZTA Applications
There are a lot of Diodes Incorporated
ZXTP2008ZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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