ZXTP2008GTA
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- Mfr.Part #
- ZXTP2008GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5.5A SOT223-3
- Stock
- 791
- In Stock ：
- 791
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Continuous Collector Current :
- -5.5A
- Max Power Dissipation :
- 3W
- Published :
- 2006
- Element Configuration :
- Single
- Number of Elements :
- 1
- Current Rating :
- -5.5A
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 1.65mm
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Length :
- 6.7mm
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 30V
- Number of Terminations :
- 4
- Pin Count :
- 4
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -30V
- Base Part Number :
- ZXTP2008
- Factory Lead Time :
- 15 Weeks
- Max Collector Current :
- 5.5A
- Collector Emitter Saturation Voltage :
- -210mV
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 500mA, 5.5A
- Collector Emitter Voltage (VCEO) :
- 30V
- Transition Frequency :
- 110MHz
- Gain Bandwidth Product :
- 110MHz
- hFE Min :
- 100
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Number of Pins :
- 4
- Power Dissipation :
- 3W
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Frequency :
- 110MHz
- Polarity/Channel Type :
- PNP
- Width :
- 3.7mm
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Weight :
- 7.994566mg
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Datasheets
- ZXTP2008GTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2008GTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 1V.The collector emitter saturation voltage is -210mV, which allows for maximum design flexibility.When VCE saturation is 210mV @ 500mA, 5.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -5.5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5.5A.In the part, the transition frequency is 110MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 5.5A volts can be achieved.
ZXTP2008GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz
ZXTP2008GTA Applications
There are a lot of Diodes Incorporated
ZXTP2008GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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