ZXTP2008GTA
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- Mfr.Part #
- ZXTP2008GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5.5A SOT223-3
- Stock
- 791
- In Stock ：
- 791
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 30V
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Saturation Voltage :
- -210mV
- Width :
- 3.7mm
- Base Part Number :
- ZXTP2008
- Continuous Collector Current :
- -5.5A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 4
- Gain Bandwidth Product :
- 110MHz
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 500mA, 5.5A
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Pins :
- 4
- Power Dissipation :
- 3W
- Length :
- 6.7mm
- Frequency :
- 110MHz
- Package / Case :
- TO-261-4, TO-261AA
- Transition Frequency :
- 110MHz
- hFE Min :
- 100
- Max Collector Current :
- 5.5A
- Max Power Dissipation :
- 3W
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Voltage - Rated DC :
- -30V
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Current Rating :
- -5.5A
- Published :
- 2006
- Collector Emitter Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Weight :
- 7.994566mg
- JESD-609 Code :
- e3
- Height :
- 1.65mm
- Pbfree Code :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- ZXTP2008GTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2008GTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 1V.The collector emitter saturation voltage is -210mV, which allows for maximum design flexibility.When VCE saturation is 210mV @ 500mA, 5.5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -5.5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -5.5A.In the part, the transition frequency is 110MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 5.5A volts can be achieved.
ZXTP2008GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz
ZXTP2008GTA Applications
There are a lot of Diodes Incorporated
ZXTP2008GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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