ZXT13P20DE6TA
- Mfr.Part #
- ZXT13P20DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 20V 4A SOT26
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.8mm
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- -4A
- Current Rating :
- -3.5A
- Package / Case :
- SOT-23-6
- Collector Emitter Voltage (VCEO) :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Length :
- 3.1mm
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 350mA, 3.5A
- Current - Collector Cutoff (Max) :
- 100nA
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 6
- Gain Bandwidth Product :
- 90MHz
- Height :
- 1.3mm
- Number of Pins :
- 6
- Max Breakdown Voltage :
- 20V
- Transition Frequency :
- 90MHz
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 4A
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1.1W
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.7W
- Collector Base Voltage (VCBO) :
- 25V
- Emitter Base Voltage (VEBO) :
- 7.5V
- Voltage - Rated DC :
- -20V
- Weight :
- 14.996898mg
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -165mV
- Published :
- 2006
- Terminal Finish :
- Matte Tin (Sn)
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Number of Terminations :
- 6
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 20V
- Frequency :
- 90MHz
- Base Part Number :
- ZXT13P20D
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1.1W
- Factory Lead Time :
- 15 Weeks
- Datasheets
- ZXT13P20DE6TA

PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT13P20DE6TA Overview
In this device, the DC current gain is 300 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -165mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 350mA, 3.5A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.Keeping the emitter base voltage at 7.5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3.5A).90MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
ZXT13P20DE6TA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of -165mV
the vce saturation(Max) is 250mV @ 350mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -3.5A
a transition frequency of 90MHz
ZXT13P20DE6TA Applications
There are a lot of Diodes Incorporated
ZXT13P20DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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