ZXT10N50DE6TA

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Mfr.Part #
ZXT10N50DE6TA
Manufacturer
Diodes Incorporated
Package / Case
SOT-23-6
Datasheet
Download
Description
TRANS NPN 50V 3A SOT23-6
Stock
3,589
In Stock :
3,589

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency :
165MHz
Terminal Finish :
Matte Tin (Sn)
Number of Terminations :
6
Peak Reflow Temperature (Cel) :
260
Current - Collector Cutoff (Max) :
100nA
Lead Free :
Lead Free
Length :
3.1mm
Weight :
14.996898mg
Polarity/Channel Type :
NPN
Transistor Element Material :
SILICON
Continuous Collector Current :
3A
Voltage - Rated DC :
50V
Number of Pins :
6
Emitter Base Voltage (VEBO) :
5V
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
1.3mm
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
300mV @ 100mA, 3A
Current Rating :
3A
Base Part Number :
ZXT10N50D
Pin Count :
6
Width :
1.8mm
Gain Bandwidth Product :
165MHz
Terminal Position :
Dual
Max Power Dissipation :
1.1W
Factory Lead Time :
15 Weeks
Element Configuration :
Single
JESD-609 Code :
e3
Max Collector Current :
3A
Collector Emitter Voltage (VCEO) :
50V
Transition Frequency :
165MHz
Transistor Application :
SWITCHING
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 2A 2V
Published :
2006
Max Breakdown Voltage :
50V
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
Transistor Type :
NPN
Power Dissipation :
1.7W
Package / Case :
SOT-23-6
Collector Base Voltage (VCBO) :
50V
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Collector Emitter Saturation Voltage :
225mV
Collector Emitter Breakdown Voltage :
50V
Mounting Type :
Surface Mount
Datasheets
ZXT10N50DE6TA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXT10N50DE6TA from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Number of Pins:6, Base Part Number:ZXT10N50D, Package / Case:SOT-23-6, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, ZXT10N50DE6TA pinout, ZXT10N50DE6TA datasheet PDF, ZXT10N50DE6TA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXT10N50DE6TA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXT10N50DE6TA


NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-23-6 Tape & Reel (TR) Surface Mount

ZXT10N50DE6TA Overview


In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 225mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 100mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).165MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.

ZXT10N50DE6TA Features


the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 225mV
the vce saturation(Max) is 300mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 165MHz


ZXT10N50DE6TA Applications


There are a lot of Diodes Incorporated
ZXT10N50DE6TA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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