ZXT10N50DE6TA
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- Mfr.Part #
- ZXT10N50DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT23-6
- Stock
- 3,589
- In Stock ：
- 3,589
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.3mm
- Width :
- 1.8mm
- Max Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Frequency :
- 165MHz
- Packaging :
- Tape and Reel (TR)
- Weight :
- 14.996898mg
- Factory Lead Time :
- 15 Weeks
- Transition Frequency :
- 165MHz
- Collector Base Voltage (VCBO) :
- 50V
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 165MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Package / Case :
- SOT-23-6
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 3A
- Base Part Number :
- ZXT10N50D
- Number of Pins :
- 6
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Pin Count :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.7W
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Power Dissipation :
- 1.1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Length :
- 3.1mm
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 6
- Collector Emitter Breakdown Voltage :
- 50V
- Continuous Collector Current :
- 3A
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Current Rating :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 50V
- Mount :
- Surface Mount
- Published :
- 2006
- Collector Emitter Saturation Voltage :
- 225mV
- Datasheets
- ZXT10N50DE6TA
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT10N50DE6TA Overview
In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 225mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 100mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).165MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
ZXT10N50DE6TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 225mV
the vce saturation(Max) is 300mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 165MHz
ZXT10N50DE6TA Applications
There are a lot of Diodes Incorporated
ZXT10N50DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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