ZXT10N50DE6TA
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- Mfr.Part #
- ZXT10N50DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT23-6
- Stock
- 3,589
- In Stock ：
- 3,589
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 165MHz
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.8mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Transition Frequency :
- 165MHz
- Max Power Dissipation :
- 1.1W
- Published :
- 2006
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 3.1mm
- Pin Count :
- 6
- Height :
- 1.3mm
- Collector Base Voltage (VCBO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 3A
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SOT-23-6
- Number of Terminations :
- 6
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 225mV
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.7W
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Base Part Number :
- ZXT10N50D
- Radiation Hardening :
- No
- Current Rating :
- 3A
- Weight :
- 14.996898mg
- Max Collector Current :
- 3A
- Collector Emitter Breakdown Voltage :
- 50V
- Voltage - Rated DC :
- 50V
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Collector Current :
- 3A
- Max Breakdown Voltage :
- 50V
- Number of Pins :
- 6
- Frequency :
- 165MHz
- Datasheets
- ZXT10N50DE6TA
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT10N50DE6TA Overview
In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 225mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 100mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).165MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
ZXT10N50DE6TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 225mV
the vce saturation(Max) is 300mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 165MHz
ZXT10N50DE6TA Applications
There are a lot of Diodes Incorporated
ZXT10N50DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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