ZXT10N50DE6TA
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- Mfr.Part #
- ZXT10N50DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT23-6
- Stock
- 3,589
- In Stock ：
- 3,589
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Current Rating :
- 3A
- Number of Pins :
- 6
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.1W
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Length :
- 3.1mm
- Package / Case :
- SOT-23-6
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Width :
- 1.8mm
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- Power Dissipation :
- 1.7W
- Pin Count :
- 6
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Transition Frequency :
- 165MHz
- ECCN Code :
- EAR99
- Weight :
- 14.996898mg
- Current - Collector Cutoff (Max) :
- 100nA
- Height :
- 1.3mm
- Frequency :
- 165MHz
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 50V
- Max Collector Current :
- 3A
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Application :
- SWITCHING
- Base Part Number :
- ZXT10N50D
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 6
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 3A
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 3A
- Collector Emitter Saturation Voltage :
- 225mV
- Voltage - Rated DC :
- 50V
- Gain Bandwidth Product :
- 165MHz
- Lead Free :
- Lead Free
- Datasheets
- ZXT10N50DE6TA
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT10N50DE6TA Overview
In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 225mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 100mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).165MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
ZXT10N50DE6TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 225mV
the vce saturation(Max) is 300mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 165MHz
ZXT10N50DE6TA Applications
There are a lot of Diodes Incorporated
ZXT10N50DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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