ZXT10N50DE6TA
- Mfr.Part #
- ZXT10N50DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT23-6
- Stock
- 3,589
- In Stock :
- 3,589
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1.7W
- Terminal Form :
- Gull wing
- Published :
- 2006
- Max Power Dissipation :
- 1.1W
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Pbfree Code :
- yes
- Transition Frequency :
- 165MHz
- Collector Base Voltage (VCBO) :
- 50V
- Height :
- 1.3mm
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 50V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-23-6
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Pins :
- 6
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 50V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 225mV
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Frequency :
- 165MHz
- Transistor Element Material :
- SILICON
- Base Part Number :
- ZXT10N50D
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 3A
- Continuous Collector Current :
- 3A
- Max Collector Current :
- 3A
- Number of Terminations :
- 6
- Length :
- 3.1mm
- Weight :
- 14.996898mg
- Current Rating :
- 3A
- Gain Bandwidth Product :
- 165MHz
- Width :
- 1.8mm
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Pin Count :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Datasheets
- ZXT10N50DE6TA

NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT10N50DE6TA Overview
In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 225mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 100mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).165MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
ZXT10N50DE6TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 225mV
the vce saturation(Max) is 300mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 165MHz
ZXT10N50DE6TA Applications
There are a lot of Diodes Incorporated
ZXT10N50DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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