ZXT10N50DE6TA
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- Mfr.Part #
- ZXT10N50DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT23-6
- Stock
- 3,589
- In Stock ：
- 3,589
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 50V
- Frequency :
- 165MHz
- Number of Terminations :
- 6
- Voltage - Rated DC :
- 50V
- Power Dissipation :
- 1.7W
- Transistor Element Material :
- SILICON
- Height :
- 1.3mm
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 50V
- Current Rating :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 3A
- Element Configuration :
- Single
- Width :
- 1.8mm
- Pin Count :
- 6
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Transition Frequency :
- 165MHz
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 6
- Package / Case :
- SOT-23-6
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 100nA
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 165MHz
- Length :
- 3.1mm
- Radiation Hardening :
- No
- Published :
- 2006
- Collector Emitter Saturation Voltage :
- 225mV
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 3A
- Weight :
- 14.996898mg
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 50V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Base Part Number :
- ZXT10N50D
- Lead Free :
- Lead Free
- Max Collector Current :
- 3A
- Max Power Dissipation :
- 1.1W
- Datasheets
- ZXT10N50DE6TA
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT10N50DE6TA Overview
In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 225mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 100mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).165MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
ZXT10N50DE6TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 225mV
the vce saturation(Max) is 300mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 165MHz
ZXT10N50DE6TA Applications
There are a lot of Diodes Incorporated
ZXT10N50DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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