ZXT10N50DE6TA
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- Mfr.Part #
- ZXT10N50DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT23-6
- Stock
- 3,589
- In Stock ：
- 3,589
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Frequency :
- 165MHz
- Max Collector Current :
- 3A
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Terminal Form :
- Gull wing
- Transition Frequency :
- 165MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 6
- ECCN Code :
- EAR99
- Published :
- 2006
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 6
- Transistor Application :
- SWITCHING
- Number of Pins :
- 6
- Gain Bandwidth Product :
- 165MHz
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 3A
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Height :
- 1.3mm
- Base Part Number :
- ZXT10N50D
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 3A
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.8mm
- Max Breakdown Voltage :
- 50V
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 3.1mm
- Continuous Collector Current :
- 3A
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 225mV
- Weight :
- 14.996898mg
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA
- Max Power Dissipation :
- 1.1W
- Package / Case :
- SOT-23-6
- Power Dissipation :
- 1.7W
- Datasheets
- ZXT10N50DE6TA
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT10N50DE6TA Overview
In this device, the DC current gain is 100 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 225mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 100mA, 3A.Maintaining the continuous collector voltage at 3A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).165MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
ZXT10N50DE6TA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 225mV
the vce saturation(Max) is 300mV @ 100mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 165MHz
ZXT10N50DE6TA Applications
There are a lot of Diodes Incorporated
ZXT10N50DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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