ZXT10P40DE6TA
- Mfr.Part #
- ZXT10P40DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-6
- Stock
- 407
- In Stock :
- 407
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SOT-23-6
- Power Dissipation :
- 1.7W
- Current - Collector Cutoff (Max) :
- 100nA
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.1mm
- Number of Terminations :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1.1W
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- Weight :
- 14.996898mg
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1A 2V
- Frequency :
- 190MHz
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 40V
- Max Collector Current :
- 2A
- Collector Emitter Saturation Voltage :
- -210mV
- Mount :
- Surface Mount
- Number of Pins :
- 6
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 190MHz
- Gain Bandwidth Product :
- 190MHz
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Base Part Number :
- ZXT10P40D
- Element Configuration :
- Single
- Pin Count :
- 6
- Height :
- 1.3mm
- Width :
- 1.8mm
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 40V
- Current Rating :
- -2A
- Factory Lead Time :
- 15 Weeks
- Power - Max :
- 1.1W
- Voltage - Rated DC :
- -40V
- Continuous Collector Current :
- -2A
- Datasheets
- ZXT10P40DE6TA
ZXT10P40DE6TA Documents

PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT10P40DE6TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of -210mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 190MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 2A volts.
ZXT10P40DE6TA Features
the DC current gain for this device is 180 @ 1A 2V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 190MHz
ZXT10P40DE6TA Applications
There are a lot of Diodes Incorporated
ZXT10P40DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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