ZXT11N15DFTA
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- Mfr.Part #
- ZXT11N15DFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 3A SOT23-3
- Stock
- 16,479
- In Stock ：
- 16,479
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 145MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Current - Collector Cutoff (Max) :
- 100nA
- Length :
- 3.05mm
- Emitter Base Voltage (VEBO) :
- 7.5V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 2V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Mount :
- Surface Mount
- Height :
- 1mm
- Radiation Hardening :
- No
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 3A
- Collector Emitter Saturation Voltage :
- 110mV
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Width :
- 1.4mm
- Weight :
- 7.994566mg
- Terminal Form :
- Gull wing
- Frequency :
- 145MHz
- Collector Emitter Breakdown Voltage :
- 15V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 150mA, 3A
- Collector Base Voltage (VCBO) :
- 40V
- Current Rating :
- 3.3A
- Voltage - Rated DC :
- 15V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 806mW
- Factory Lead Time :
- 15 Weeks
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 145MHz
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 3A
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Max Power Dissipation :
- 625mW
- Base Part Number :
- ZXT11N15D
- Max Breakdown Voltage :
- 15V
- Collector Emitter Voltage (VCEO) :
- 15V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Datasheets
- ZXT11N15DFTA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXT11N15DFTA Overview
In this device, the DC current gain is 300 @ 200mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 110mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 150mA, 3A.A 3A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7.5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3.3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 145MHz.Input voltage breakdown is available at 15V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
ZXT11N15DFTA Features
the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 110mV
the vce saturation(Max) is 150mV @ 150mA, 3A
the emitter base voltage is kept at 7.5V
the current rating of this device is 3.3A
a transition frequency of 145MHz
ZXT11N15DFTA Applications
There are a lot of Diodes Incorporated
ZXT11N15DFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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