ZXT13P12DE6TA
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- Mfr.Part #
- ZXT13P12DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 12V 4A SOT23-6
- Stock
- 38,061
- In Stock ：
- 38,061
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Power Dissipation :
- 1.7W
- Transition Frequency :
- 55MHz
- Max Power Dissipation :
- 1.1W
- Current Rating :
- -4A
- Published :
- 2006
- Base Part Number :
- ZXT13P12D
- Collector Emitter Saturation Voltage :
- -150mV
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Voltage - Rated DC :
- -12V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.8mm
- Number of Pins :
- 6
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Package / Case :
- SOT-23-6
- Max Collector Current :
- 4A
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 12V
- Length :
- 3.1mm
- Emitter Base Voltage (VEBO) :
- 7.5V
- Collector Emitter Breakdown Voltage :
- 12V
- Weight :
- 14.996898mg
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Power - Max :
- 1.1W
- Vce Saturation (Max) @ Ib, Ic :
- 175mV @ 400mA, 4A
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 12V
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Terminal Form :
- Gull wing
- Number of Terminations :
- 6
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 55MHz
- Frequency :
- 55MHz
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Lead Free :
- Lead Free
- Height :
- 1.3mm
- Continuous Collector Current :
- -4A
- Pin Count :
- 6
- Datasheets
- ZXT13P12DE6TA
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT13P12DE6TA Overview
This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -150mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -4A is necessary for high efficiency.The base voltage of the emitter can be kept at 7.5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.In this part, there is a transition frequency of 55MHz.As a result, it can handle voltages as low as 12V volts.The maximum collector current is 4A volts.
ZXT13P12DE6TA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 175mV @ 400mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is -4A
a transition frequency of 55MHz
ZXT13P12DE6TA Applications
There are a lot of Diodes Incorporated
ZXT13P12DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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