ZXT13N50DE6TA
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- Mfr.Part #
- ZXT13N50DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A SOT26
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 4A
- Current Rating :
- 4A
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 4A
- Pin Count :
- 6
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Terminations :
- 6
- Power Dissipation :
- 1.7W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Max Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Height :
- 1.3mm
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7.5V
- Terminal Form :
- Gull wing
- Width :
- 1.8mm
- Collector Emitter Saturation Voltage :
- 145mV
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA
- Mount :
- Surface Mount
- Weight :
- 14.996898mg
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Transition Frequency :
- 115MHz
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 115MHz
- Element Configuration :
- Single
- Published :
- 2006
- Base Part Number :
- ZXT13N50D
- Length :
- 3.1mm
- Radiation Hardening :
- No
- Package / Case :
- SOT-23-6
- Voltage - Rated DC :
- 50V
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 400mA, 4A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 6
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 50V
- Gain Bandwidth Product :
- 115MHz
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1.1W
- Datasheets
- ZXT13N50DE6TA
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT13N50DE6TA Overview
DC current gain in this device equals 300 @ 1A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 145mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 180mV @ 400mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 7.5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 115MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 4A volts.
ZXT13N50DE6TA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 145mV
the vce saturation(Max) is 180mV @ 400mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4A
a transition frequency of 115MHz
ZXT13N50DE6TA Applications
There are a lot of Diodes Incorporated
ZXT13N50DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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