ZXT13N50DE6TA
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- Mfr.Part #
- ZXT13N50DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A SOT26
- Stock
- 5
- In Stock ：
- 5
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 6
- Continuous Collector Current :
- 4A
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 145mV
- Width :
- 1.8mm
- Max Collector Current :
- 4A
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 3.1mm
- ECCN Code :
- EAR99
- Package / Case :
- SOT-23-6
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Transition Frequency :
- 115MHz
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 6
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 6
- Gain Bandwidth Product :
- 115MHz
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 1.1W
- Collector Emitter Breakdown Voltage :
- 50V
- Height :
- 1.3mm
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1.7W
- Collector Emitter Voltage (VCEO) :
- 50V
- Pbfree Code :
- yes
- Current Rating :
- 4A
- Mounting Type :
- Surface Mount
- Frequency :
- 115MHz
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Base Part Number :
- ZXT13N50D
- Terminal Position :
- Dual
- Published :
- 2006
- Max Breakdown Voltage :
- 50V
- Weight :
- 14.996898mg
- Collector Base Voltage (VCBO) :
- 100V
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 7.5V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 100nA
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 400mA, 4A
- Voltage - Rated DC :
- 50V
- Datasheets
- ZXT13N50DE6TA
NPN -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT13N50DE6TA Overview
DC current gain in this device equals 300 @ 1A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 145mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 180mV @ 400mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 7.5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 115MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 4A volts.
ZXT13N50DE6TA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 145mV
the vce saturation(Max) is 180mV @ 400mA, 4A
the emitter base voltage is kept at 7.5V
the current rating of this device is 4A
a transition frequency of 115MHz
ZXT13N50DE6TA Applications
There are a lot of Diodes Incorporated
ZXT13N50DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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